US2007158302A1PendingUtilityA1

Systems and methods for gas assisted resist removal

54
Individually held — no corporate assignee on recordPriority: Aug 16, 2000Filed: Feb 27, 2007Published: Jul 12, 2007
Est. expiryAug 16, 2020(expired)· nominal 20-yr term from priority
Inventors:Terry L. Gilton
H10P 70/18H10P 72/0424H10P 50/287H10P 72/0448G03F 7/427Y10S438/948G03F 7/423
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Claims

Abstract

A system for removing resist from a substrate is configured to apply an ozonated resist stripper to a resist that is to be removed, as well as to direct another gas toward the resist. In a resist removal method, a resist stripper that includes ozone is applied to a resist and another gas is directed toward the resist. Direction of a gas other than ozone at least partially toward the resist may facilitate removal of the resist, such as by causing movement in the resist stripper.

Claims

exact text as granted — not AI-modified
1 . A system for removing resist from a substrate, comprising: 
 a source of resist stripper, the resist stripper comprising ozone;    an applicator in communication with the source and configured to apply a quantity of the resist stripper to the resist;    a gas source of at least one gas other than ozone; and    a gas output element in communication with the gas source and configured to direct the at least one gas at least partially toward the resist.    
   
   
       2 . The system of  claim 1 , wherein the at least one gas comprises nitrogen.  
   
   
       3 . The system of  claim 1 , wherein the at least one gas includes at least one gas that facilitates removal of the resist from the substrate.  
   
   
       4 . The system of  claim 3 , wherein the at least one gas comprises gaseous hydrochloric acid.  
   
   
       5 . The system of  claim 1 , wherein the applicator is configured to at least partially coat the resist with the resist stripper.  
   
   
       6 . The system of  claim 5 , wherein the applicator is configured to spray the quantity of the resist stripper onto at least a portion of the resist.  
   
   
       7 . The system of  claim 1 , wherein the applicator comprises the quantity of the resist stripper within which at least a portion of a surface of the resist is immersible.  
   
   
       8 . The system of  claim 1 , wherein the gas output element is positioned and configured to effect movement of the resist stripper laterally over a surface of the substrate.  
   
   
       9 . The system of  claim 1 , wherein the gas output element is located and configured to thin a layer of the resist disposed over a surface of the substrate.  
   
   
       10 . The system of  claim 1 , wherein the gas output element is configured and located so as to direct the at least one gas in substantially the same direction as a direction in which the applicator is located and configured to apply the resist stripper.  
   
   
       11 . The system of  claim 1 , wherein the gas output element is configured to direct the at least one gas in a different direction from the direction in which the applicator is located and configured to apply the resist stripper.  
   
   
       12 . The system of  claim 1 , further comprising: 
 a support structure configured to orient a plane of the substrate nonhorizontally.    
   
   
       13 . The system of  claim 1 , further comprising: 
 a support structure configured to rotate the substrate about an axis perpendicular to a plane thereof.    
   
   
       14 . A method for facilitating the removal of reactants from a resist stripper during removal thereof from a substrate, comprising: 
 applying a resist stripper comprising ozone to the resist; and    directing a quantity of at least one gas other than ozone at least partially toward the resist stripper.    
   
   
       15 . The method of  claim 14 , wherein applying comprises at least partially coating the resist with the resist stripper.  
   
   
       16 . The method of  claim 14 , wherein applying comprises spraying the resist stripper onto the resist.  
   
   
       17 . The method of  claim 14 , wherein applying comprises immersing at least a portion of a surface of the resist within a quantity of the resist stripper.  
   
   
       18 . The method of  claim 14 , wherein directing is effected from substantially the same location as a location from which applying is effected.  
   
   
       19 . The method of  claim 14 , wherein directing is effected from a different location than a location from which applying is effected.  
   
   
       20 . The method of  claim 14 , wherein directing comprises directing nitrogen at least partially toward the resist stripper.  
   
   
       21 . The method of  claim 14 , wherein directing comprises directing at least one gas that facilitates removal of the resist at least partially toward the resist stripper.  
   
   
       22 . The method of  claim 21 , further comprising directing hydrochloric acid at least partially toward the resist stripper.  
   
   
       23 . The method of  claim 14 , wherein directing the at least one gas comprises effecting movement of the resist stripper laterally over the substrate.  
   
   
       24 . The method of  claim 14 , wherein directing the at least one gas comprises thinning the resist stripper.  
   
   
       25 . The method of  claim 14 , wherein applying and directing remove a hard-baked resist at a rate of at least about 8,000 angstroms per second.  
   
   
       26 . The method of  claim 14 , wherein applying and directing remove a hard-baked resist at a rate of about 8,000 to about 12,000 angstroms per second.  
   
   
       27 . The method of  claim 14 , further comprising: 
 orienting a plane of the substrate nonhorizontally.    
   
   
       28 . The method of  claim 14 , further comprising: 
 rotating the substrate about an axis perpendicular to a plane thereof.

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