Organic tri-stable device and method for manufacturing the same

Abstract

An organic tri-stable device. The organic tri-stable device comprises a first electrode, a second electrode, a diffusion barrier layer, a first organic mixture layer and a second organic mixture layer. The diffusion barrier layer is located between the first electrode and the second electrode. The first organic mixture layer is located between the first electrode and the diffusion barrier layer. The second organic mixture layer is located between the second electrode and the diffusion barrier layer.

What is claimed is: 
     
         1 . An organic tri-stable device, comprising:
 a first electrode;   a second electrode;   a diffusion barrier layer located between the first electrode and the second electrode;   a first organic mixture layer located between the first electrode and the diffusion barrier layer; and   a second organic mixture layer located between the second electrode and the diffusion barrier layer.   
     
     
         2 . The organic tri-stable device of  claim 1 , wherein a first buffer layer and a second buffer layer are disposed on a first surface of the first electrode and a second surface of the second organic mixture layer respectively and contact the first organic mixture layer and the second electrode respectively. 
     
     
         3 . The organic tri-stable device of  claim 2 , wherein the materials of the first buffer layer and the second buffer layer are materials with high dielectric constants including Al 2 O x , LiF, MgO, V 2 O 5 , or TiO 2 . 
     
     
         4 . The organic tri-stable device of  claim 1 , wherein the materials of the first electrode and the material of the second electrode are respectively selected from a group consisting of copper, gold, silver, aluminum, cobalt, or nickel. 
     
     
         5 . The organic tri-stable device of  claim 1 , wherein the first organic mixture layer and the second organic mixture layer are prepared by using an organic material as a primary material mixing with a metal material. 
     
     
         6 . The organic tri-stable device of  claim 5 , wherein the organic material includes Alq, AlDCN, CuPc, or polymeric organic semiconductor material including DH6T, DHADT, P3HT. 
     
     
         7 . The organic tri-stable device of  claim 5 , wherein the metal material is selected from a group consisting of copper, gold, silver, aluminum, cobalt, nickel, or the alloys thereof. 
     
     
         8 . The organic tri-stable device of  claim 5 , wherein in the first organic mixture layer and the second organic mixture layer, the ratio of the organic material to the metal material is 5˜100. 
     
     
         9 . The organic tri-stable device of  claim 1 , wherein the material of the diffusion barrier layer is selected from a group consisting of indium, tantalum, titanium, tungsten, molybdenum, niobium, chromium, aluminum, indium tin oxide, TiO 2 , TaN, FCN, WN, other metal oxide materials and metal nitride materials. 
     
     
         10 . The organic tri-stable device of  claim 1 , wherein the conductive constant of the first organic mixture layer is different from that of the second organic mixture layer. 
     
     
         11 . A method for manufacturing an organic tri-stable device on a substrate, comprising:
 forming a first metal layer on the substrate;   forming a first organic mixture layer over the first metal layer;   forming a diffusion barrier layer over the first metal layer;   forming a second organic mixture layer on the diffusion barrier layer; and   forming a second metal layer over the second organic mixture layer.   
     
     
         12 . The method of  claim 11 , wherein the method for forming the diffusion barrier layer is selected from a group consisting of an evaporation process and a printing process. 
     
     
         13 . The method of  claim 11 , wherein the material of the diffusion barrier layer is selected from a group consisting of indium, tantalum, titanium, tungsten, molybdenum, niobium, chromium, aluminum, indium tin oxide, TiO 2 , TaN, FCN, WN, other metal oxide materials and metal nitride materials. 
     
     
         14 . The method of  claim 11 , wherein the methods for forming the first organic mixture layer and the second organic mixture layer comprise:
 performing a thermal evaporation, wherein a metal material and an organic material are co-evaporated.   
     
     
         15 . The method of  claim 14 , wherein the evaporation speed of the organic material is different from that of the metal material. 
     
     
         16 . The method of  claim 11 , wherein the methods for forming the first organic mixture layer and the second organic mixture layer comprise:
 performing a printing process with the use of a mixture solution having an organic material and a metal material.   
     
     
         17 . The method of  claim 11 , further comprising forming a first buffer layer between the first metal layer and the first organic mixture layer. 
     
     
         18 . The method of  claim 11 , further comprising forming a second buffer layer between the second organic mixture layer and the second metal layer. 
     
     
         19 . An operating process of an organic device, wherein the organic device comprises a first electrode, a second electrode, a diffusion barrier layer between the first electrode and the second electrode, the operating process comprising:
 performing a programming process, wherein the programming process comprises:
 when the organic device is at a turn-off state, applying a first positive bias from the first electrode to the second electrode on the organic device so that a conductive state of the organic device is switched to be a first turn-on state; 
 when the organic device is at the first turn-on state, applying a negative bias from the first electrode to the second electrode on the organic device so that the conductive state of the organic device is switched to be a second turn-on state; and 
   performing an erasing process to apply a second positive bias from the first electrode to the second electrode on the organic device so that the conductive state of the organic device is switched to be the turn-off state.   
     
     
         20 . The operating process of  claim 19 , wherein the first positive bias is lower than the second positive bias.