Thermal interface material and semiconductor device incorporating the same

Abstract

A semiconductor device ( 10 ) includes a heat source ( 12 ), a heat-dissipating component ( 13 ) for dissipating heat generated by the heat source, and thermal interface material ( 14 ) filled in spaces formed between the heat source and the heat-dissipating component. The thermal interface material includes 100 parts by weight of alkenyl groups-containing organopolysiloxane, and Si—H groups-containing compound selected from the group consisting of organo-hydrogenpolysiloxane and polyorganohydrogensiloxane, and 800 to 1200 parts by weight of fillers consisting of aluminum powder having a mean particle size of 0.1 to 1 um and zinc oxide powder having a mean particle size of 1 to 5 um in a weight ratio of from 1/1 to 10/1 .

1 . A thermal interface material comprising:
 100 parts by weight of base oil; and   800 to 1200 parts by weight of fillers in the base oil;   wherein the base oil comprises Si—H groups contained in at least one of organo-hydrogenpolysiloxane and polyorganohydrogensiloxane, and alkenyl groups contained in organopolysiloxane and cured with the Si—H groups.   
   
   
       2 . The thermal interface material as described in  claim 1 , wherein the organopolysiloxane has a viscosity from 50 to 5000 cps at 25° C. 
   
   
       3 . The thermal interface material as described in  claim 1 , wherein a ratio of the number of the alkenyl groups to the number of the Si—H groups is 1:1. 
   
   
       4 . The thermal interface material as described in  claim 1 , wherein a ratio of the number of the alkenyl groups in the organopolysiloxane to the number of the Si—H groups in the organo-hydrogenpolysiloxane, and to the number of the Si—H groups in polyorganohydrogensiloxane is 4:1:3. 
   
   
       5 . The thermal interface material as described in  claim 1 , wherein the organo-hydrogenpolysiloxane has a chemical structure formula as follows: 
     
       
         
         
             
             
         
       
     
     a and b herein are positive numbers satisfying 0.01<a/(a+b)<0.4. 
   
   
       6 . The thermal interface material as described in  claim 1 , wherein a chemical structure formula of the polyorganohydrogensiloxane is one of: 
     
       
         
         
             
             
         
       
     
   
   
       7 . The thermal interface material as described in  claim 1 , wherein the fillers are a mixture of aluminum powder and zinc oxide powder in a weight ratio from 1/1 to 10/1. 
   
   
       8 . The thermal interface material as described in  claim 7 , wherein the aluminum powder has an average particle size of from 1 to 5 um, whilst the zinc oxide powder has an average particle size of from 0.1 to 1 um. 
   
   
       9 . The thermal interface material as described in  claim 1 , further comprising a catalyst selected from among platinum and platinum compounds, in such an amount as to give 0.1 to 500 parts by weight of per million parts of the organopolysiloxane. 
   
   
       10 . The thermal interface material as described in  claim 9 , wherein the platinum compounds are chloroplatinic acid, platinum-olefin complexes, platinum-alcohol complexes, and platinum coordinate compounds. 
   
   
       11 . A semiconductor device comprising:
 a heat source;   a heat-dissipating component for dissipating heat generated by the heat source; and   thermal interface material filled in spaces formed between the heat source and the heat-dissipating component, the thermal interface material comprising:   100 parts by weight of alkenyl groups-containing organopolysiloxane, and Si—H groups-containing compound selected from the group consisting of organo-hydrogenpolysiloxane and polyorganohydrogensiloxane;   800 to 1200 parts by weight of fillers consisting of aluminum powder having a mean particle size of 0.1 to 1 um and zinc oxide powder having a mean particle size of 1 to 5 um in a weight ratio from 1/1 to 10/1; and   a catalyst selected from the group consisting of platinum and platinum compounds, in such an amount as to give 0.1 to 500 parts by weight of per million parts of the organopolysiloxane.   
   
   
       12 . The thermal interface material as described in  claim 11 , wherein a ratio of the number of the alkenyl groups in the organopolysiloxane to the number of the Si—H groups in the organo-hydrogenpolysiloxane, and to the number of the Si—H groups in the polyorganohydrogensiloxane is 4:1:3. 
   
   
       13 . The thermal interface material as described in  claim 11 , wherein the organo-hydrogenpolysiloxane has a chemical structure formula: 
     
       
         
         
             
             
         
       
     
     a and b herein are positive numbers satisfying 0.01<a/(a+b)<0.4. 
   
   
       14 . The thermal interface material as described in  claim 11 , wherein a chemical structure formula of the polyorganohydrogensiloxane is one of: 
     
       
         
         
             
             
         
       
     
   
   
       15 . The thermal interface material as described in  claim 11 , wherein a chemical structure formula of the organopolysiloxane is: 
     
       
         
         
             
             
         
       
     
     m herein being larger than or equal to 2.