Thermal interface material and semiconductor device incorporating the same

Abstract

A thermal interface material ( 13 ) and a semiconductor device ( 10 ) using the thermal interface material are provided. The thermal interface material is formed as a sheet, comprising a pair of cured sheets ( 131 ) and a reinforcement member ( 132 ) arranged between the cured sheets. The reinforcement member, which improves the physical strength of the thermal interface material, is made of a material chosen from the group consisting of woven copper fabric, woven copper cloth, woven stainless fabric, woven stainless cloth, and any appropriate combination of the aforementioned materials.

1 . A thermal interface material comprising:
 a pair of cured sheets; and   a reinforcement member interposed between the cured sheets, wherein the reinforcement member is made of a material chosen from the group consisting of woven copper fabric, woven copper cloth, woven stainless fabric, woven stainless cloth, and any appropriate combination of the aforementioned materials.   
   
   
       2 . The thermal interface material of  claim 1 , wherein the thermal interface material is formed as a sheet and a thickness thereof is in the range of 25˜500 μm. 
   
   
       3 . The thermal interface material of  claim 1 , wherein the cured sheets are made of a room temperature vulcanizing silicone elastomer, with zinc oxide powder being dispersed in the silicone elastomer. 
   
   
       4 . The thermal interface material of  claim 3 , wherein an average particle size of the zinc oxide powder is in a range of 0.1˜5 μm. 
   
   
       5 . A semiconductor device comprising:
 a heat generating electronic component;   a heat dissipating component that dissipates heat generated by the heat-generating electronic component; and   a thermal interface material attached between the heat-generating electronic component and the heat dissipating component, wherein   the thermal interface material includes a pair of cured sheets and a reinforcement member arranged between the cured sheets, wherein   the reinforcement member is made of a material chosen from the group consisting of woven copper fabric, woven copper cloth, woven stainless fabric, woven stainless cloth, and any suitable combination of the aforementioned materials.   
   
   
       6 . The semiconductor device of  claim 5 , wherein the thermal interface material is formed as a sheet and a thickness thereof is in the range of 25˜500 μm. 
   
   
       7 . The semiconductor device of  claim 5 , wherein the cured sheets are made of a room temperature vulcanizing silicone elastomer, with zinc oxide powder being dispersed in the silicone elastomer. 
   
   
       8 . The semiconductor device of  claim 7 , wherein an average particle size of the zinc oxide powder is in a range of 0.1˜5 μm.