Semiconductor light emitting device and method of manufacturing the same

Abstract

Provided are a semiconductor light emitting device having a nano pattern and a method of manufacturing the semiconductor light emitting device. The semiconductor light emitting device includes: a semiconductor layer comprising a plurality of nano patterns, wherein the plurality of nano patterns are formed inside the semiconductor layer; and an active layer formed on the semiconductor layer. The optical output efficiency is increased and inner defects of the semiconductor light emitting device are reduced.

1 . A semiconductor light emitting device comprising: 
 a semiconductor layer comprising a plurality of nano patterns that have an optical scattering effect on light inside the semiconductor layer, wherein the nano patterns are formed inside the semiconductor layer; and    an active layer formed on the semiconductor layer.    
   
   
       2 . The semiconductor light emitting device of  claim 1 , wherein the semiconductor layer comprises: 
 a first semiconductor layer wherein the plurality of nano patterns are formed; and    a second semiconductor layer formed on a region of the first semiconductor layer where the plurality of nano patterns are formed.    
   
   
       3 . The semiconductor light emitting device of  claim 2 , wherein the first and the second semiconductor layers contain GaN.  
   
   
       4 . The semiconductor light emitting device of  claim 2 , further comprising a third semiconductor layer formed on the active layer.  
   
   
       5 . The semiconductor light emitting device of  claim 1 , wherein each of plurality of the nano patterns is formed of a light-transmissive material having a refractive index smaller than 2.5.  
   
   
       6 . The semiconductor light emitting device of  claim 5 , wherein each of the plurality of nano patterns is a transparent insulator and contains at least one of SiO 2 , SiN x , Al 2 O 3 , HfO, TiO 2  or ZrO.  
   
   
       7 . The semiconductor light emitting device of  claim 5 , wherein each of the plurality of nano patterns is a transparent conductor formed of ZnO or of an In oxide containing at least one additive selected from the group consisting of Ag, Zn, Sc, Hf, Zr, Te, Se, Ta, W, Nb, Cu, Si, Ni, Co, Mo, Cr, Mn, Hg, Pr, and La.  
   
   
       8 . The semiconductor light emitting device of  claim 1 , wherein the semiconductor layer is formed on a substrate of sapphire, GaN, ZnO, SiC, or GaO.  
   
   
       9 . The semiconductor light emitting device of  claim 4 , further comprising: 
 a first electrode formed on the third semiconductor layer; and    a second electrode formed on a portion of the second semiconductor layer where the active layer is not formed.    
   
   
       10 . A method of manufacturing a semiconductor light emitting device having a nano pattern, the method comprising: 
 (a) forming a first semiconductor layer on a substrate;    (b) forming an uneven structure by patterning the first semiconductor layer;    (c) forming a nano pattern by filling the uneven structure of the first semiconductor layer with light-transmissive material; and    (d) sequentially forming a second semiconductor layer, an active layer, and a third semiconductor layer on the first semiconductor layer.    
   
   
       11 . The method of  claim 10 , wherein (b) comprises etching using H 3 PO 4 or KOH.  
   
   
       12 . The method of  claim 10 , wherein (c) comprises: 
 coating a light-transmissive material over the exposed substrate and the uneven structure of the first semiconductor layer; and    leveling the first semiconductor layer such that a surface of the first semiconductor layer is exposed.    
   
   
       13 . The method of  claim 12 , wherein the light-transmissive material is a transparent insulator and is formed of at least one selected from the group consisting of SiO 2 , SiN x , Al 2 O 3 , HfO, TiO 2 , and ZrO.  
   
   
       14 . The method of  claim 12 , wherein the light-transmissive material is a transparent conductor and is formed of ZnO or of an In oxide containing at least one additive selected from the group consisting of Mg, Ag, Zn, Sc, Hf, Zr, Te, Se, Ta, W, Nb, Cu, Si, Ni, Co, Mo, Cr, Mn, Hg, Pr, and La.  
   
   
       15 . The method of  claim 12 , further comprising heating after the coating with the light-transmissive material.