Forming electrical contacts to a molecular layer

Abstract

The present invention provides a process for forming electrical contacts to a molecular layer in a nanoscale device, the nanoscale device, and a method of manufacturing an integrated circuit comprise such devices. The process includes coating a surface of a stamp with a metal layer and forming an attached layer of anchored molecules by coupling first ends of the anchored molecules to a conductive or semiconductive substrate. The process also includes placing the metal layer in contact with the attached layer of anchored molecules such that the metal layer chemically bonds to free ends of the anchored molecules. The resulting devices produced have superior reliability as compared to conventional prepared devices.

1 . A nanoscale electronic device, comprising: 
 a conductive or semiconductive substrate;    a layer of anchored molecules having first and second ends, said first ends of said molecules being covalently anchored to said conductive or semiconductive substrate, said second ends able to rotate about said anchored first ends; and    a printed metal layer covalently coupled to said second ends of said layer of anchored molecules.    
     
     
         2 . The device as recited in  claim 1  wherein said anchored molecules comprise one or more compounds characterized by the chemical formula:  
         F′—(R) n —F″ wherein F′ comprises said first end wherein said first end comprises a first functional moiety capable of chemically bonding to said conductive or semiconductive substrate; F″ comprises said second end wherein said second end comprises a second functional moiety capable of chemically bonding to said metal layer; R comprises a bridge covalently linking said first and second ends, where R comprises individually substituted or unsubstituted non-reactive chemical groups and 0≦n≦50.    
     
     
         3 . The device as recited in  claim 2  wherein said first functional moieties are selected from the group consisting of: 
 thiols;    monocarboxylates;    dicarboxylates; and    alkoxides.    
     
     
         4 . The device as recited in  claim 2  wherein said second functional moieties are selected from the group consisting of: 
 thiols; and    disulfides.    
     
     
         5 . The device as recited in  claim 2  wherein R comprises an alkane having the chemical formula: (—CH 2 —) n  or an aromatic having the chemical formula: (—C 6 H 4 —) n , and 1≦n≦25.  
     
     
         6 . The device as recited in  claim 1  wherein said device is a diode.  
     
     
         7 . The device as recited in  claim 1  wherein said conductive or semiconductive substrate is selected from the group consisting of: 
 Gallium Arsenide;    Silicon;    Indium Phosphide;    Gold;    Tungsten; and    Organic Semiconductors.    
     
     
         8 . The device as recited in  claim 1  wherein said layer of anchored molecules forms a one of a channel and a gate dielectric, said conductive or semiconductive substrate forms the other of a first electrode and a channel, and said printed metal layer forms a second electrode of a field effect transistor.  
     
     
         9 . The device as recited in  claim 1  wherein said device has a contact resistance between said printed metal layer and said conductive or semiconductive substrate that is at least about 10 times higher than a contact resistance for a substantially identical device except having an evaporated metal layer.  
     
     
         10 . A nanoscale electronic device, comprising: 
 a conductive or semiconductive substrate;    a layer of anchored molecules having reactive ends and nonreactive ends, said reactive ends of said molecules being covalently anchored to said semiconductive substrate, said nonreactive ends able to rotate about said reactive ends; and    a printed metal layer laminated to said nonreactive ends of said layer of anchored molecules.