Silicon wafer and method for production of silicon wafer

Abstract

A silicon wafer, which has been doped with nitrogen and has been subjected to an extrinsic gettering (EG) treatment, for example, the formation of a polysilicon layer. In the silicon wafer, when the wafer is exposed to an ion of a heavy metal such as copper or nickel in a device manufacturing process, the copper and nickel can be captured by the action of intrinsic gettering (IG) in the course of a heat treatment, and, when a polysilicon layer is formed as a strain layer, iron and copper can be captured by the action of an extrinsic gettering (EG) using the polysilicon as a strong point for the capture.

1 . A silicon wafer, which is doped with an element that facilitates a precipitation of a bulk micro defect (BMD) and is subjected to an extrinsic gettering (EG) treatment.  
   
   
       2 . The silicon wafer according to  claim 1 , wherein the element comprises one of nitrogen and carbon, or both nitrogen and carbon.  
   
   
       3 . The silicon wafer according to  claim 1 , wherein the wafer is doped with boron of a low concentration.  
   
   
       4 . The silicon wafer according to  claim 1 , wherein an epitaxial growth layer is formed thereon.  
   
   
       5 . A silicon wafer, which is doped with nitrogen so as to increase a concentration of BMD to such an extent that an intrinsic gettering (IG) is conducted for, at least, nickel, and which is subjected to an extrinsic gettering (EG) treatment to such an extent that gettering of iron and copper is effected.  
   
   
       6 . A method for manufacturing a silicon wafer, comprising: 
 doping a silicon wafer with an element that facilitates a precipitation of BMD; and    performing an extrinsic gettering (EG) treatment to the silicon wafer.    
   
   
       7 . A method for manufacturing a silicon wafer, comprising: 
 doping a silicon wafer with an element that facilitates a precipitation of BMD together with boron of a low concentration; and    performing an extrinsic gettering (EG) treatment to the silicon wafer.    
   
   
       8 . A method for manufacturing a silicon wafer, comprising: 
 doping a silicon wafer with an element that facilitates a precipitation of BMD;    performing an extrinsic gettering (EG) treatment to the silicon wafer; and    forming an epitaxial growth layer on the silicon wafer.    
   
   
       9 . A method for manufacturing a silicon wafer, comprising: 
 doping a silicon wafer with an element that facilitates a precipitation of BMD together with boron of a low concentration;    performing an extrinsic gettering (EG) treatment to the silicon wafer; and    forming an epitaxial growth layer on the silicon wafer.    
   
   
       10 . A method for manufacturing a silicon wafer, comprising: 
 doping a silicon wafer with nitrogen so as to increase a concentration of BMD to such an extent that an intrinsic gettering (IG) is conducted for, at least, nickel; and    performing an extrinsic gettering (EG) treatment to the silicon wafer to such an extent that gettering of iron and copper is effected.    
   
   
       11 . A silicon wafer, which is subjected to selective gettering for various types of heavy metal ions by a plurality of different gettering means.