Schottky Diode Device with Aluminum Pickup of Backside Cathode

Abstract

An integrated circuit package includes a semiconductor chip having a passivation layer forming the top surface of the semiconductor chip and a metal pad formed on the passivation layer and a discrete electronic device having a first terminal formed on a first surface and a second terminal formed on a second surface opposite the first surface of the discrete electronic device where the first surface of the discrete electronic device is attached to the metal pad using a conductive adhesive structure. The semiconductor chip and the discrete electronic device are encapsulated in an encapsulation material. An electrical connection is formed between the metal pad and one of a bond pad of the semiconductor chip or a package post of the integrated circuit package. In one embodiment, the metal pad is an aluminum pad and a metal line connects the metal pad to a bond pad of the semiconductor chip.

1 . An integrated circuit package comprising: 
 a semiconductor chip having a passivation layer forming the top surface of the semiconductor chip and a metal pad formed on the passivation layer;    a discrete electronic device having a first terminal formed on a first surface and a second terminal formed on a second surface opposite the first surface of the discrete electronic device, the first surface of the discrete electronic device being attached to the metal pad using a conductive adhesive structure; and    an encapsulation material encapsulating the semiconductor chip and the discrete electronic device,    wherein an electrical connection is formed between the metal pad and one of a bond pad of the semiconductor chip or a package post of the integrated circuit package.    
     
     
         2 . The integrated circuit package of  claim 1 , wherein the electrical connection is formed between the metal pad and a first bond pad of the semiconductor chip and the semiconductor chip further includes a metal line connecting the metal pad to the first bond pad.  
     
     
         3 . The integrated circuit package of  claim 2 , wherein the first bond pad connects to circuitry of the semiconductor chip.  
     
     
         4 . The integrated circuit package of  claim 1 , wherein the electrical connection is formed between the metal pad and a first package post of integrated circuit package using a bond wire.  
     
     
         5 . The integrated circuit package of  claim 1 , further comprising a second electrical connection formed using a bond wire from the second terminal on the second surface of the discrete electronic device to one of a bond pad of the semiconductor chip or a package post of the integrated circuit package.  
     
     
         6 . The integrated circuit package of  claim 1 , wherein the metal pad comprises an aluminum pad.  
     
     
         7 . The integrated circuit package of  claim 1 , wherein the conductive adhesive structure comprises a conductive epoxy.  
     
     
         8 . The integrated circuit package of  claim 1 , wherein the conductive adhesive structure comprises a gold layer formed on the first surface of the discrete electronic device and a conductive epoxy layer formed on the gold layer for attaching to the metal pad.  
     
     
         9 . The integrated circuit package of  claim 8 , wherein the gold layer is doped with 0.1% arsenic.  
     
     
         10 . The integrated circuit package of  claim 1 , wherein the discrete electronic device comprises one of a Schottky diode, a VDMOS device, an NPN transistor and a PNP transistor.  
     
     
         11 . The integrated circuit package of  claim 1 , wherein the first surface of the discrete electronic device is roughened using a coarse wheel grinder.  
     
     
         12 . A boost converter integrated circuit package comprising: 
 a boost converter integrated circuit having a passivation layer forming the top surface of the boost converter integrated circuit and a metal pad formed on the passivation layer;    a discrete Schottky diode having an anode terminal formed on a topside and a cathode terminal formed on the backside of the Schottky diode, the backside of the discrete Schottky diode being attached to the metal pad using a conductive adhesive structure; and    an encapsulation material encapsulating the boost converter integrated circuit and the discrete Schottky diode,    wherein a first electrical connection is formed between the metal pad and a first bond pad of the boost converter integrated circuit, thereby electrically connecting the cathode terminal to the first bond pad and a second electrical connection is formed using a bond wire between the anode terminal on the top side of the Schottky diode and a package post of the integrated circuit package.