Semiconductor package with heat dissipating structure and method of manufacturing the same

Abstract

A semiconductor package in which heat is easily dissipated and a semiconductor chip is not damaged during a molding process, and a method of manufacturing the same. The semiconductor package with a heat dissipating structure includes a substrate, a semiconductor chip, which is mounted on the substrate and electrically connected with the substrate by bonding means, a heat slug which is adhered to the semiconductor chip and formed of a thermally conductive material, and a heat spreader partially exposed to the outside of the semiconductor package, and which is formed on the heat slug to be spaced a buffer gap apart from the heat slug.

1 . A semiconductor package with a heat dissipating structure comprising: 
 a substrate;    a semiconductor chip which is mounted on the substrate and electrically connected with the substrate by bonding means;    a heat slug which is adhered to the semiconductor chip and formed of a thermally conductive material having a CTE different from that of the semiconductor chip;    a heat spreader partially exposed to the outside of the semiconductor package and which is formed on the heat slug to be spaced a buffer gap apart from the heat slug, and    wherein the heat spreader is spaced apart from the heat slug.    
   
   
       2 . The semiconductor package of  claim 1 , wherein the heat spreader is formed on the heat slug to be spaced a buffer gap of about 20-30 μm and the heat slug has a thickness of about 200-400 μm.  
   
   
       3 . The semiconductor package of  claim 1 , wherein the heat slug is made of a highly thermally conductive material selected from the group consisting of copper, a copper alloy, aluminum, an aluminum alloy, steel, stainless steel, and a combination thereof.  
   
   
       4 . The semiconductor package of  claim 1 , wherein the heat slug is made of a thermally conductive material selected from the group consisting of ceramic, an insulator and a semiconductor material.  
   
   
       5 . The semiconductor package of  claim 1 , wherein the heat spreader comprises: 
 an upper plate portion having one surface exposed to the outside of the semiconductor package and another surface formed on the heat slug to be spaced a predetermined distance apart from the heat slug; and    a support which is formed on a lower surface of an edge of the upper plate portion and supports the upper plate portion on the substrate.    
   
   
       6 . The semiconductor package of  claim 1 , wherein the heat spreader is made of a highly thermally conductive material selected from the group consisting of copper, a copper alloy, aluminum, an aluminum alloy, steel, stainless steel, and a combination thereof.  
   
   
       7 . The semiconductor package of  claim 6 , wherein the upper plate portion of the heat spreader has a thickness of about 100-200 μm.  
   
   
       8 . The semiconductor package of  claim 1 , wherein the semiconductor chip and the heat slug are adhered by an adhesive and the adhesive is an electric insulator and a thermal conductor.  
   
   
       9 . The semiconductor package of  claim 1 , wherein the bonding means is a bonding wire.  
   
   
       10 . The semiconductor package of  claim 1 , wherein the heat slug has a CTE smaller than that of the semiconductor chip.  
   
   
       11 . A semiconductor package with a heat dissipating structure comprising: 
 a substrate;    a semiconductor chip which is mounted on the substrate and electrically connected with the substrate by bonding means;    a heat slug which is adhered to the semiconductor chip and formed of a thermally conductive material having a thermal conductivity being higher than the semiconductor chip;    a heat spreader partially exposed to the outside of the semiconductor package and which is formed on the heat slug to be spaced a buffer gap apart from the heat slug, and    wherein the heat spreader is spaced apart from the heat slug.    
   
   
       12 . The semiconductor package of  claim 11 , wherein the heat spreader is formed on the heat slug to be spaced a buffer gap of about 20-30 μm and the heat slug has a thickness of about 200-400 μm.  
   
   
       13 . The semiconductor package of  claim 11 , wherein the heat slug is made of a highly thermally conductive material selected from the group consisting of copper, a copper alloy, aluminum, an aluminum alloy, steel, stainless steel, and a combination thereof.  
   
   
       14 . The semiconductor package of  claim 11 , wherein the heat slug is made of a thermally conductive material selected from the group consisting of ceramic, an insulator and a semiconductor material.  
   
   
       15 . The semiconductor package of  claim 11 , wherein the heat spreader comprises: 
 an upper plate portion having one surface exposed to the outside of the semiconductor package and another surface formed on the heat slug to be spaced a predetermined distance apart from the heat slug; and    a support which is formed on a lower surface of an edge of the upper plate portion and supports the upper plate portion on the substrate.    
   
   
       16 . The semiconductor package of  claim 11 , wherein the heat spreader is made of a highly thermally conductive material selected from the group consisting of copper, a copper alloy, aluminum, an aluminum alloy, steel, stainless steel, and a combination thereof.  
   
   
       17 . The semiconductor package of  claim 16 , wherein the upper plate portion of the heat spreader has a thickness of about 100-200 μm.  
   
   
       18 . The semiconductor package of  claim 11 , wherein the semiconductor chip and the heat slug are adhered by an adhesive and the adhesive is an electric insulator and a thermal conductor.  
   
   
       19 . The semiconductor package of  claim 18 , wherein the adhesive is thermally conductive resin.  
   
   
       20 . The semiconductor package of  claim 11 , wherein the bonding means is a bonding wire.