Method of manufacturing aluminum and aluminum alloy sputtering targets

Abstract

A manufacturing method of sputtering targets uses a direct-chill method to fabricate various aluminum and aluminum alloy ingots. Without the need of follow-up forging processes, the fabricated aluminum alloy ingots can be cut to attain aluminum and aluminum alloy sputtering targets. The method according to the present invention features the advantages of few process steps, high productivity, and high yield. In addition, the fabricated targets have small grains, fine precipitate phases, and homogeneous composition.

1 . A method of manufacturing aluminum and aluminum alloy sputtering targets, wherein a direct-chill method is used to fabricate pure metal aluminum, or aluminum alloy sputtering targets alloyed with at least one of elements chosen from the group consisting of copper, manganese, silicon, magnesium, zinc, titanium, scandium, zirconium, vanadium, chromium, iron, cobalt, lithium, silver, yttrium, hafnium, tantalum, and carbon; and without follow-up forging processes, the targets fabricated being small in grains, being fine in precipitate phases, and being homogeneous in structures.  
   
   
       2 . The method of manufacturing aluminum and aluminum alloy sputtering targets of  claim 1 , wherein the targets include pure metal aluminum, or aluminum alloy alloyed with at least one of elements chosen from the group consisting of copper, manganese, silicon, magnesium, zinc, titanium, scandium, zirconium, vanadium, chromium, iron, cobalt, lithium, silver, yttrium, hafnium, tantalum, and carbon.  
   
   
       3 . The method of manufacturing aluminum and aluminum alloy sputtering targets of  claim 2 , wherein the targets include pure metal aluminum, or aluminum alloy alloyed with other different elements, the content of said other different elements being smaller than or equal to 15%.  
   
   
       4 . The method of manufacturing aluminum and aluminum alloy sputtering targets of  claim 2 , wherein grain sizes of the fabricated targets are below 100 micrometers.  
   
   
       5 . The method of manufacturing aluminum and aluminum allots stuttering targets of  claim 2 , wherein sizes of secondary precipitate phases of the fabricated targets are below 50 micrometers.