Polishing apparatus and polishing method

Abstract

A polishing apparatus polish a surface of a substrate, such as a semiconductor substrate. The polishing apparatus according to the present invention includes a substrate holding mechanism, a polishing table having a polishing surface, and a polishing surface temperature controller for controlling a temperature distribution of the polishing surface. The substrate holding mechanism and the polishing table are operable to provide relative movement between the surface of the substrate and the polishing surface while the substrate holding mechanism presses the surface of the substrate against the polishing surface to thereby polish the surface of the substrate. The polishing surface temperature controller controls the temperature distribution so that the polishing surface has a predetermined temperature distribution to thereby control removal rates of portions of the surface of the substrate.

1 . A polishing apparatus comprising: 
 a substrate holding mechanism for holding a substrate;    a polishing table having a polishing surface, said substrate holding mechanism and said polishing table being operable to provide relative movement between the surface of the substrate and said polishing surface while said substrate holding mechanism presses the surface of the substrate against said polishing surface to thereby polish the surface of the substrate; and    a polishing surface temperature controller for controlling a temperature distribution of said polishing surface,    wherein said polishing surface temperature controller controls the temperature distribution so that said polishing surface has a predetermined temperature distribution to thereby control removal rates of portions of the surface of the substrate.    
   
   
       2 . The polishing apparatus according to  claim 1 , wherein said polishing surface temperature controller comprises a fluid ejection mechanism for providing the predetermined temperature distribution on said polishing surface by ejecting a fluid to said polishing surface.  
   
   
       3 . The polishing apparatus according to  claim 2 , wherein said fluid ejection mechanism comprises plural fluid ejection ports.  
   
   
       4 . The polishing apparatus according to  claim 3 , further comprising: 
 at least one of a flow rate controller and a temperature controller,    wherein said flow rate controller is for individually adjusting flow rates of the fluid to be ejected through said plural fluid ejection ports, and said temperature controller is for individually adjusting temperatures of the fluid to be ejected through said plural fluid ejection ports.    
   
   
       5 . The polishing apparatus according to  claim 3 , further comprising: 
 at least one of an ejection port number adjuster and a supply position adjuster,    wherein said ejection port number adjuster is for adjusting the number of fluid ejection ports to be used for ejecting the fluid, and said supply position adjuster is for adjusting supply positions where the ejected fluid from said fluid ejection ports strikes said polishing surface.    
   
   
       6 . The polishing apparatus according to  claim 4 , further comprising: 
 a temperature-distribution measuring device for measuring the temperature distribution of said polishing surface,    wherein based on a measurement result of said temperature-distribution measuring device, said polishing surface temperature controller controls ejection of the fluid using at least one of said flow rate controller and said temperature controller to thereby provide the predetermined temperature distribution on said polishing surface.    
   
   
       7 . The polishing apparatus according to  claim 5 , further comprising: 
 a temperature-distribution measuring device for measuring the temperature distribution of said polishing surface,    wherein based on a measurement result of said temperature-distribution measuring device, said polishing surface temperature controller controls ejection of the fluid using at least one of said ejection port number adjuster and the supply position adjuster to thereby provide the predetermined temperature distribution on said polishing surface.    
   
   
       8 . A polishing method comprising: 
 bringing a surface of a substrate into contact with a polishing surface;    providing relative movement between the surface of the substrate and the polishing surface to perform polishing of the surface of the substrate; and    during said polishing, controlling a temperature distribution of the polishing surface so that the polishing surface has a predetermined temperature distribution to thereby control removal rates of portions of the surface of the substrate.    
   
   
       9 . A polishing method comprising: 
 bringing a surface of a substrate into contact with a polishing surface; and    providing relative movement between the surface of the substrate and the polishing surface to perform polishing of the surface of the substrate,    wherein said polishing includes: 
 performing a first polishing process of polishing the surface of the substrate while controlling a temperature distribution of the polishing surface so that the polishing surface has a predetermined temperature distribution; and  
 performing a second polishing process of polishing the surface of the substrate without controlling the temperature distribution of the polishing surface.  
   
   
   
       10 . The polishing method according to  claim 9 , wherein: 
 said first polishing process comprises performing polishing while ejecting a fluid to the polishing surface so as to control the temperature distribution of the polishing surface; and    said second polishing process comprises performing polishing without ejecting the fluid to the polishing surface.    
   
   
       11 . The polishing method according to  claim 9 , wherein a time of said first polishing process accounts for more than half of an entire time of said polishing.  
   
   
       12 . A polishing method comprising: 
 bringing a surface of a substrate into contact with a polishing surface; and    providing relative movement between the surface of the substrate and the polishing surface to perform polishing of the surface of the substrate,    wherein said polishing includes: 
 performing a first polishing process of polishing the surface of the substrate while controlling a temperature distribution of the polishing surface so that the polishing surface has a predetermined temperature distribution; and  
 performing a second polishing process of polishing the surface of the substrate while maintaining a higher temperature distribution of the polishing surface than that during said first polishing process.  
   
   
   
       13 . The polishing method according to  claim 12 , wherein: 
 said first polishing process comprises performing polishing while ejecting a fluid to the polishing surface at a predetermined flow rate; and    said second polishing process comprises performing polishing while ejecting the fluid to the polishing surface at a lower flow rate than that during said first polishing process.    
   
   
       14 . A polishing method comprising: 
 bringing a surface of a substrate into contact with a polishing surface; and    providing relative movement between the surface of the substrate and the polishing surface to perform polishing of the surface of the substrate,    wherein said polishing includes: 
 performing a first polishing process of polishing the surface of the substrate while ejecting a non-humidified gas to the polishing surface so that the polishing surface has a predetermined temperature distribution; and  
 performing a second polishing process of polishing the surface of the substrate while ejecting a humidified gas to the polishing surface so that the polishing surface has a predetermined temperature distribution.