Plasma chamber wall segment temperature control

Abstract

A device and method for controlling the temperature of a plasma chamber inside wall or other surfaces exposed to the plasma by a plurality of temperature control systems. A plasma process within the plasma chamber can be controlled by independently controlling the temperature of segments of the wall or other surfaces.

1 . A method of controlling a temperature of a plasma chamber wall comprising: 
 controlling the temperature of a plurality of segments of the wall or other surfaces exposed to the plasma with a plurality of temperature control systems of a first type; and    controlling the temperature of a plurality of segments of the wall or the other surfaces with a plurality of temperature control systems of a second type different from the first type.    
   
   
       2 . A method as in  claim 1  wherein the second type of control system has a faster thermal response than the first type of control system.  
   
   
       3 . A method as in  claim 1 , wherein the second type of control system has a higher resolution thermal response than the first type of control system.  
   
   
       4 . A method as in  claim 1  further comprising measuring the temperature of at least a portion of the wall or the other surfaces with the temperature control system of the second type.  
   
   
       5 . A method as in  claim 1  wherein the temperature control systems of the first type comprise fluid circulation systems.  
   
   
       6 . A method as in  claim 1  wherein the temperature control systems of the second type comprise thermoelectric devices.  
   
   
       7 . A method as in  claim 6  further comprising measuring heat flux using the thermoelectric devices.  
   
   
       8 . A method as in  claim 7  further comprising correlating the measured heat flux to values in a look-up table to obtain an estimated process parameter and; 
 adjusting at least one of the temperature control systems of a first type and the temperature control systems of a second type based on the estimated process parameter.    
   
   
       9 . A method as in  claim 8  wherein the process parameter is uniformity.  
   
   
       10 . A method as in  claim 1  further comprising comparing a measured temperature distribution to values stored in a look-up table to determine process uniformity.  
   
   
       11 . A method as in  claim 10  wherein the look-up table is provided through a design-of-experiments approach.  
   
   
       12 . A method as in  claim 1  further comprising: 
 measuring the temperature of at least a portion of the wall or other surfaces; and    using the measured temperature of the wall or other surfaces to control the temperature control systems.    
   
   
       13 . A method of controlling a plasma process comprising: 
 processing a substrate with a plasma within a plasma chamber having a wall or other surfaces exposed to the plasma;    controlling the temperature of a plurality of segments of the wall or the other surfaces with a plurality of temperature control systems of a first type;    controlling the temperature of a plurality of segments of the wall or the other surfaces with a plurality of temperature control systems of a second type different from the first type;    measuring the temperature of at least a portion of the wall or the other surfaces;    adjusting a parameter of the plasma process by adjusting the temperature control systems.    
   
   
       14 . A method as in  claim 13 , wherein the second type of temperature control systems have a faster thermal response than the first type of temperature control systems.  
   
   
       15 . A method as in  claim 13 , wherein the second type of temperature control systems have a higher resolution thermal response than the first type of temperature control systems.  
   
   
       16 . A method as in  claim 13 , wherein the measuring is performed using at least one of the temperature control systems of the second type.