Thermal interface material and semiconductor device incorporating the same

Abstract

A semiconductor device includes a heat source, a heat-dissipating component for dissipating heat generated by the heat source, and thermal interface material filled in a space formed between the heat source and the heat-dissipating component. The thermal interface material includes 50% to 90% in weight of at least one metal powders having an average particle size of 2 to 20 μm and selected from the group consisting of spherical tin powders and powders of memory alloy, and 5% to 15% in weight of silicone oil having a viscosity from 50 tO 50,000 cs at 25° C.

1 . A thermal interface material comprising: 
 5% to 15% in weight of base oil; and    50% to 90% in weight of fillers filled in the base oil, wherein the fillers have an average particle size of 2 to 20 μm and are selected from the group consisting of spherical tin powders and powders made of memory alloys.    
   
   
       2 . The thermal interface material as described in  claim 1 , wherein the base oil has a viscosity from 50 to 50,000 cs at 25° C.  
   
   
       3 . The thermal interface material as described in  claim 1 , wherein the base oil is silicone oil.  
   
   
       4 . The thermal interface material as described in  claim 3 , wherein a major component of the silicone oil is organopolysiloxane.  
   
   
       5 . The thermal interface material as described in  claim 4 , wherein the organopolysiloxane is dimethylpolysiloxane.  
   
   
       6 . The thermal interface material as described in  claim 1 , wherein the ratio of the spherical tin powders to the powders of memory alloy is in a range of 1:1 to 1:10 in weight.  
   
   
       7 . The thermal interface material as described in  claim 1 , wherein the memory alloy is Ni—Ti alloy.  
   
   
       8 . The thermal interface material as described in  claim 1 , wherein the memory alloy is Co—Zn 13  Al alloy.  
   
   
       9 . The thermal interface material as described in  claim 1 , further comprising 0% to 35% in weight of oxide powders.  
   
   
       10 . The thermal interface material as described in  claim 9 , wherein an average particle size of the oxide powders is in the range of 0.1 to 5 μm.  
   
   
       11 . The thermal interface material as described in  claim 9 , wherein the oxide powders are selected from the group consisting of zinc oxide and alumina powders.  
   
   
       12 . A semiconductor device comprising: 
 a heat source;    a heat-dissipating component for dissipating heat generated by the heat source; and    a thermal interface material filled in a space formed between the heat source and the heat-dissipating component, the thermal interface material comprising:    50% to 90% in weight of at least one metal powders having an average particle size of 2 to 20 μm and selected from the group consisting of spherical tin powders and powders made of memory alloy;    5% to 15% in weight of silicone oil having a viscosity from 50 to 50,000 cs at 25° C.; and    0% to 35% in weight of at least one oxide powders having an average particle size of 0.1 to 5 μm and selected from the group consisting of zinc oxide and alumina powders.    
   
   
       13 . The semiconductor device as described in  claim 12 , wherein the memory alloy is one of Ni—Ti alloy and Co—Zn—Al alloy.  
   
   
       14 . The semiconductor device as described in  claim 12 , wherein a major component of the silicone oil is organopolysiloxane.  
   
   
       15 . The semiconductor device as described in  claim 14 , wherein the organopolysiloxane is dimethylpolysiloxane.  
   
   
       16 . The semiconductor device as described in  claim 12 , wherein a ratio of the spherical tin powders to the powders of memory alloy is in a range of 1:1 to 1:10 in weight.  
   
   
       17 . A thermal interface material adapted for being applied between a heat-generating electronic component and a heat-dissipating component, comprising: 
 a base oil; and    fillers filled in the base oil, wherein the fillers comprise at least one of tin powders and powders of memory alloy.    
   
   
       18 . The thermal interface material as described in  claim 17 , wherein the tin powders and the powders of memory alloy each have a spherical shape before the thermal interface material is applied between the heat-generating electronic component and the heat-dissipating component.  
   
   
       19 . The thermal interface material as described in  claim 18 , wherein the tin powders and powders of memory alloy each have an elliptical shape after the thermal interface material is applied between the heat-generating electronic component and the heat-dissipating component.  
   
   
       20 . The thermal interface material as described in  claim 19 , wherein the fillers further comprise oxide powders.