Chemical mechanical polishing method and method of manufacturing semiconductor device

Abstract

A chemical mechanical polishing method comprises polishing an organic film using a slurry including polymer particles having a surface functional group and a water-soluble polymer.

1 . A chemical mechanical polishing method comprising polishing an organic film using a slurry including polymer particles having a surface functional group and a water-soluble polymer.  
   
   
       2 . The chemical mechanical polishing method according to  claim 1 , 
 wherein the surface functional group is at least one functional group selected from the group consisting of an anionic functional group, a cationic functional group, an ampholytic functional group, and a nonionic functional group.    
   
   
       3 . The chemical mechanical polishing method according to  claim 1 , 
 wherein the polymer particles comprise at least one resin selected from the group consisting of an acrylic resin, a polystyrene resin, a urea resin, a melamine resin, a polyacetal resin, a polycarbonate resin, and a composite of these resins.    
   
   
       4 . The chemical mechanical polishing method according to  claim 1 , 
 wherein the surface functional group is a carboxyl group.    
   
   
       5 . The chemical mechanical polishing method according to  claim 1 , 
 wherein a molecular weight of the water-soluble polymer is 500 to 1,000,000.    
   
   
       6 . A method of manufacturing a semiconductor device comprising: 
 forming an insulating film on a substrate;    forming a depression in the insulating film;    forming a lower-layer film, an intermediate layer, and a resist film in that order on the insulating film in which the depression is formed; and    subjecting the resist film to pattern exposure;    forming the lower-layer film comprising:    forming an organic film on the insulating film in which the depression is formed so that the depression is filled with the organic film; and    chemically and mechanically polishing the organic film using a slurry comprising polymer particles having a surface functional group and a water soluble polymer to planarize the organic film.    
   
   
       7 . A method of manufacturing a semiconductor device comprising: 
 forming an insulating film on a substrate;    forming a depression in the insulating film;    forming a lower-layer film comprising first and second organic films, an intermediate layer, and a resist film in that order on the insulating film in which the depression is formed; and    subjecting the resist film to pattern exposure;    forming the lower-layer film comprising:    forming the first organic film on the insulating film in which the depression is formed so that the depression is filled with the first organic film;    chemically and mechanically polishing the first organic film using a slurry comprising polymer particles having a surface functional group and a water soluble polymer to planarize the first organic film; and    forming the second organic film over the insulating film and the first organic film after the planarization.    
   
   
       8 . A method of manufacturing a semiconductor device comprising: 
 forming an organic insulating film comprising an organic material on a substrate;    stacking first and second hard masks comprising an inorganic material on the organic insulating film;    forming a depression in the second hard mask;    forming a lower-layer film comprising first and second organic films, an intermediate layer, and a resist film in that order on the second hard mask in which the depression is formed; and    subjecting the resist film to pattern exposure;    forming the lower-layer film comprising:    forming the first organic film on the second hard mask in which the depression is formed so that the depression is filled with the first organic film;    chemically and mechanically polishing the first organic film using a slurry comprising polymer particles having a surface functional group and a water soluble polymer to planarize the first organic film; and    forming the second organic film over the second hard mask and the first organic film after the planarization.    
   
   
       9 . A method of manufacturing a semiconductor device comprising: 
 forming an organic insulating film comprising an organic material on a substrate;    stacking first, second, and third hard masks comprising an inorganic material on the organic insulating film;    forming a depression in the third hard mask;    forming a lower-layer film comprising first and second organic films, an intermediate layer, and a resist film in that order on the third hard mask in which the depression is formed; and    subjecting the resist film to pattern exposure;    forming the lower-layer film comprising:    forming the first organic film on the third hard mask in which the depression is formed so that the depression is filled with the first organic film;    chemically and mechanically polishing the first organic film using a slurry comprising polymer particles having a surface functional group and a water soluble polymer to planarize the first organic film; and    forming the second organic film over the third hard mask and the first organic film after the planarization.    
   
   
       10 . The method of manufacturing a semiconductor device according to  claim 7 , 
 wherein forming the first organic film comprises:    applying a material for forming the first organic film; and    baking the material at 90 to 160° C.; and    wherein the method further comprises baking the first and second organic films at 250 to 400° C.    
   
   
       11 . The method of manufacturing a semiconductor device according to  claim 8 , 
 wherein forming the first organic film comprises:    applying a material for forming the first organic film; and    baking the material at 90 to 160° C.; and    wherein the method further comprises baking the first and second organic films at 250 to 400° C.    
   
   
       12 . The method of manufacturing a semiconductor device according to  claim 9 , 
 wherein forming the first organic film comprises:    applying a material for forming the first organic film; and    baking the material at 90 to 160° C.; and    wherein the method further comprises baking the first and second organic films at 250 to 400° C.    
   
   
       13 . The method of manufacturing a semiconductor device according to  claim 6 , 
 wherein the surface functional group is at least one functional group selected from the group consisting of an anionic functional group, a cationic functional group, an ampholytic functional group, and a nonionic functional group.    
   
   
       14 . The method of manufacturing a semiconductor device according to  claim 7 , 
 wherein the surface functional group is at least one functional group selected from the group consisting of an anionic functional group, a cationic functional group, an ampholytic functional group, and a nonionic functional group.    
   
   
       15 . The method of manufacturing a semiconductor device according to  claim 8 , 
 wherein the surface functional group is at least one functional group selected from the group consisting of an anionic functional group, a cationic functional group, an ampholytic functional group, and a nonionic functional group.    
   
   
       16 . The method of manufacturing a semiconductor device according to  claim 9 , 
 wherein the surface functional group is at least one functional group selected from the group consisting of an anionic functional group, a cationic functional group, an ampholytic functional group, and a nonionic functional group.    
   
   
       17 . The method of manufacturing a semiconductor device according to  claim 6 , 
 wherein the polymer particles comprise at least one resin selected from the group consisting of an acrylic resin, a polystyrene resin, a urea resin, a melamine resin, a polyacetal resin, a polycarbonate resin, and a composite of these resins.    
   
   
       18 . The method of manufacturing a semiconductor device according to  claim 7 , 
 wherein the polymer particles comprise at least one resin selected from the group consisting of an acrylic resin, a polystyrene resin, a urea resin, a melamine resin, a polyacetal resin, a polycarbonate resin, and a composite of these resins.    
   
   
       19 . The method of manufacturing a semiconductor device according to  claim 8 , 
 wherein the polymer particles comprise at least one resin selected from the group consisting of an acrylic resin, a polystyrene resin, a urea resin, a melamine resin, a polyacetal resin, a polycarbonate resin, and a composite of these resins.    
   
   
       20 . The method of manufacturing a semiconductor device according to  claim 9 , 
 wherein the polymer particles comprise at least one resin selected from the group consisting of an acrylic resin, a polystyrene resin, a urea resin, a melamine resin, a polyacetal resin, a polycarbonate resin, and a composite of these resins.