Method and apparatus for annealing copper films

Abstract

A method and apparatus for annealing copper. The method comprises forming a copper layer by electroplating on a substrate in an integrated processing system and annealing the copper layer in a chamber inside the integrated processing system.

1 . A method for annealing a copper layer, comprising: 
 forming the copper layer on a substrate by electroplating in a first chamber of an integrated processing system;    rinsing the substrate in a cleaning station of the integrated processing system;    treating the copper layer in a gas environment in a second chamber of the integrated processing system, wherein the gas environment comprises nitrogen (N 2 ) and hydrogen (H 2 ); and    bringing the substrate in proximity to a cooling plate to cool the substrate to a temperature below about 100° C.    
   
   
       2 . The method of  claim 1 , wherein the hydrogen is present at a concentration of less than about 4% in the gas environment.  
   
   
       3 . The method of  claim 1 , wherein the copper layer is treated for a time duration less than about 5 minutes.  
   
   
       4 . The method of  claim 3 , wherein the time duration is about 30 seconds to about 2 minutes.  
   
   
       5 . The method of  claim 1 , wherein the copper layer is treated at a temperature of between about 150 degrees Celsius to about 250 degrees Celsius.  
   
   
       6 . The method of  claim 1 , wherein the gas environment comprises less than about 100 parts per million of oxygen.  
   
   
       7 . The method of  claim 1 , wherein the gas environment comprises a pressure of 760 Torr.  
   
   
       8 . The method of  claim 1 , wherein the substrate is cooled to a temperature below about 80° C.  
   
   
       9 . The method of  claim 1 , wherein the substrate is cooled to a temperature below about 50° C.  
   
   
       10 . The method of  claim 1 , wherein the substrate is cooled before additional processing.  
   
   
       11 . A method for annealing a copper layer, comprising: 
 forming the copper layer on a substrate by electroplating in a first chamber of an integrated processing system;    rinsing the substrate in a cleaning station of the integrated processing system;    treating the copper layer in a gas environment in a second chamber of the integrated processing system, wherein the gas environment comprises hydrogen (H 2 ) and a gas selected from the group consisting of nitrogen (N 2 ), argon (Ar), and helium (He); and    bringing the substrate in proximity to a cooling plate to cool the substrate to a temperature below about 100° C.    
   
   
       12 . The method of  claim 11 , wherein the hydrogen is present at a concentration of less than about 4% in the gas environment.  
   
   
       13 . The method of  claim 11 , wherein the copper layer is treated for a time duration less than about 5 minutes.  
   
   
       14 . The method of  claim 13 , wherein the time duration is about 30 seconds to about 2 minutes.  
   
   
       15 . The method of  claim 11 , wherein the copper layer is treated at a temperature of between about 150 degrees Celsius to about 250 degrees Celsius.  
   
   
       16 . The method of  claim 11 , wherein the gas environment comprises less than about 100 parts per million of oxygen.  
   
   
       17 . The method of  claim 11 , wherein the gas environment comprises a pressure of 760 Torr.  
   
   
       18 . The method of  claim 11 , wherein the substrate is cooled to a temperature below about 80° C.  
   
   
       19 . The method of  claim 11 , wherein the substrate is cooled to a temperature below about 50° C.  
   
   
       20 . The method of  claim 11 , wherein the substrate is cooled before additional processing.