Method and system for deposition tuning in an epitaxial film growth apparatus

Abstract

A method of calculating a process parameter for a deposition of an epitaxial layer on a substrate. The method includes the steps of measuring an effect of the process parameter on a thickness of the epitaxial layer to determine a gain curve for the process parameter, and calculating, using the gain curve, a value for the process parameter to achieve a target thickness of the epitaxial layer. The value is calculated to minimize deviations from the target thickness in the layer. Also, a substrate processing system comprising that includes a processor to calculate a value for the process parameter to achieve a substantially uniform epitaxial layer of a target thickness on the substrate, where the value is calculated using a gain curve derived from measurements of layer uniformity as a function of the value of the process parameter.

1 . A substrate processing system comprising: 
 a chamber;    a substrate holder, located within the chamber, to hold a substrate;    a precursor delivery system to introduce one or more precursors into the chamber;    a heating system to heat the substrate; and    a controller to control a process parameter in the precursor delivery system or the heating system; and    a processor to calculate a value for the process parameter to achieve a substantially uniform epitaxial layer of a target thickness on the substrate, wherein the value is calculated using a gain curve derived from measurements of layer uniformity as a function of the value of the process parameter.    
   
   
       2 . The substrate processing system of  claim 1 , wherein the heating system comprises a plurality of lamps.  
   
   
       3 . The substrate processing system of  claim 2 , wherein the lamps are spatially distributed into a plurality of zones comprising an outer zone, an inner zone, a lower zone, and an upper zone.  
   
   
       4 . The substrate processing system of  claim 3 , wherein the process parameter comprises an inner zone to outer zone power ratio.  
   
   
       5 . The substrate processing system of  claim 3 , wherein the process parameter comprises a lower zone to upper zone power ratio.  
   
   
       6 . The substrate processing system of  claim 1 , wherein the epitaxial layer comprises a SiGe layer.  
   
   
       7 . The substrate processing system of  claim 1 , wherein the substrate is a 300 mm silicon wafer.