Method of manufacturing semiconductor integrated circuit devices

Abstract

To alleviate the absolute value control accuracy of phases in a mask having a groove shifter structure, transfer regions formed at different planar positions on the same plane of the same mask are subjected to a multiple exposure by scanning exposure. Although. identical mask patterns are formed over the transfer regions respective groove shifters provided to these mask patterns are arranged opposite from each other.

1 . A method of manufacturing semiconductor integrated circuit devices, comprising the steps of: 
 (a) forming a photoresist film over a main surface of a wafer;    (b) after step (a), mounting the wafer with the photoresist film over a wafer stage of an exposure apparatus;    (c) exposing a first phase shift mask pattern onto a first region of the main surface of the wafer over the wafer stage by reduction projection exposure using ultraviolet light; and    (d) after the step (c), exposing a second phase shift mask pattern onto the first region of the main surface of the wafer over the wafer stage by reduction projection exposure using ultraviolet light;    wherein the first phase shift mask pattern has a plurality of first hole patterns and a second hole pattern surrounded by first auxiliary patterns,    wherein the second phase shift mask pattern has a plurality of third hole patterns and a fourth hole pattern surrounded by second auxiliary patterns,    wherein the first phase shift mask pattern is substantially the same as the second phase shift mask pattern other than their phases, and wherein a phase of the first phase shift mask pattern is inverted from a phase of the second phase shift mask pattern.    
   
   
       2 . A method according to  claim 1 , wherein the steps (c) and (d) are exposed by scanning exposure.  
   
   
       3 . A method according to  claim 1 , wherein the first and second phase shift mask patterns have a substrate groove shifter.