Production apparatus for producing gallium nitride film semiconductor and cleaning apparatus for exhaust gas

Abstract

There are disclosed a production apparatus for producing a gallium nitride film semiconductor by HVPE process, a cleaning apparatus for cleaning exhaust gas coming from the above apparatus and an overall production plant for producing a gallium nitride film semiconductor by HVPE process. Therein exhaust piping for exhaust gas in the production apparatus, introduction piping for the cleaning apparatus and exhaust gas piping which connects the production apparatus and the cleaning apparatus are each composed of an electroconductive corrosion-resistant material and are each electrically grounded, thereby surely preventing electrostatic charging due to friction between ammonium chloride powders in the exhaust gas and inside walls of exhaust gas piping, and markedly enhancing operational safety.

1 . A production apparatus for producing a gallium nitride semiconductor film by subjecting gallium chloride gas as a gallium source which is generated through the circulation of hydrogen chloride gas over metallic gallium to vapor phase deposition through the reaction with ammonia so as to form a gallium nitride film, wherein an electroconductive corrosion-resistant material is a constructional material for exhaust piping for exhaust gas, said exhaust piping is electrically grounded, and an oxygen detector and/or an oxygen concentration meter is connected to the production apparatus or a cleaning apparatus for exhaust gas.  
     
     
         2 . The production apparatus according to  claim 1 , wherein a specific volume resistivity of the electroconductive corrosion-resistant material is less than 1×10 9  Ωcm.  
     
     
         3 . The production apparatus according to  claim 1 , wherein a specific volume resistivity of the electroconductive corrosion-resistant material is less than 1×10 7  Ωcm.  
     
     
         4 . The cleaning apparatus according to  claim 1 , which is a wet absorptive cleaning method, a combustion treatment method, a thermally decomposing method or a dry reaction method.  
     
     
         5 . A production method for producing a gallium nitride semiconductor film by subjecting gallium chloride gas as a gallium source which is generated through the circulation of hydrogen chloride gas over metallic gallium to vapor phase deposition through the reaction with ammonia so as to form a gallium nitride film, wherein an electroconductive corrosion-resistant material is used as the constructional material for exhaust piping for exhaust gas, and it is subject to detecting oxygen by using an oxygen detector and/or measuring oxygen concentration by using an oxygen concentration meter, which is connected to a production apparatus for the gallium nitride semiconductor film or a cleaning apparatus for exhaust gas.