Methods and systems for determining one or more properties of a specimen

Abstract

Various methods and systems for determining one or more properties of a specimen are provided. One system for determining a property of a specimen is configured to illuminate a specimen with different wavelengths of light substantially simultaneously. The different wavelengths of light are modulated at substantially the same frequency. The system is also configured to perform at least two measurements on the specimen. A minority carrier diffusion length of the specimen may be determined from the measurements and absorption coefficients of the specimen at the different wavelengths. Another system for detecting defects on a specimen is configured to deposit a charge at multiple locations on an upper surface of the specimen. This system is also configured to measure a vibration of a probe at the multiple locations. Defects may be detected on the specimen using a two-dimensional map of the specimen generated from the measured surface voltages.

1 - 17 . (canceled)  
   
   
       18 . A system configured to detect defects on a specimen, comprising: 
 a charge deposition subsystem configured to deposit a charge at multiple locations on an upper surface of the specimen;    a measurement subsystem configured to measure a vibration of a probe at the multiple locations after the charge has been deposited; and    a processor configured to determine a surface voltage at the multiple locations from the vibration, to generate a two-dimensional map of the specimen using the surface voltage at the multiple locations, and to detect defects on the specimen using the two-dimensional map.    
   
   
       19 . The system of  claim 18 , wherein the charge comprises a first type of charge, and wherein the charge deposition subsystem is further configured to deposit a second type of charge at the multiple locations such that another two-dimensional map of the specimen can be generated.  
   
   
       20 . The system of  claim 18 , wherein the measurement subsystem is further configured to measure the vibration at one of the multiple locations while the charge deposition subsystem is depositing a charge at another of the multiple locations.  
   
   
       21 . The system of  claim 18 , wherein the probe comprises a Kelvin probe coupled to a cantilever, and wherein the measurement subsystem is further configured to measure the vibration by optically measuring a position of the cantilever.  
   
   
       22 . The system of  claim 18 , wherein the probe comprises multiple probes arranged in an array such that the multiple probes can be arranged above a plurality of the multiple locations substantially simultaneously, and wherein the measurement subsystem is further configured to measure a vibration of two or more of the multiple probes substantially simultaneously.  
   
   
       23 . The system of  claim 18 , wherein the probe has a tip size of about 10 □m to about 1 nm.  
   
   
       24 . The system of  claim 18 , wherein the probe comprises an inspection probe, wherein the measurement subsystem is further configured to measure a vibration of a review probe at locations of the defects, and wherein the review probe has a tip size that is smaller than a tip size of the inspection probe.  
   
   
       25 . The system of  claim 18 , wherein the defects comprise electrical defects.  
   
   
       26 . The system of  claim 18 , wherein the specimen comprises a patterned wafer.  
   
   
       27 . A method for detecting defects on a specimen, comprising: 
 depositing a charge at multiple locations on an upper surface of the specimen;    measuring a vibration of a probe at the multiple locations after the charge has been deposited;    determining a surface voltage at the multiple locations from the vibration;    generating a two-dimensional map of the specimen using the surface voltage at the multiple locations; and    detecting defects on the specimen using the two-dimensional map.    
   
   
       28 . The method of  claim 27 , wherein the charge is a first type of charge, the method further comprising depositing a second type of charge at the multiple locations such that an additional two-dimensional map of the specimen can be generated, and wherein said detecting comprises detecting defects on the specimen using the two-dimensional map and the additional two-dimensional map.  
   
   
       29 . The method of  claim 27 , wherein said measuring is performed at one of the multiple locations while said depositing is performed at another of the multiple locations.  
   
   
       30 . The method of  claim 27 , wherein the probe comprises a Kelvin probe coupled to a cantilever, and wherein said measuring comprises optically measuring a position of the cantilever.  
   
   
       31 . The method of  claim 27 , wherein the probe comprises multiple probes arranged in an array such that the multiple probes can be arranged above a plurality of the multiple locations substantially simultaneously, and wherein said measuring comprises measuring a vibration of two or more of the multiple probes substantially simultaneously.  
   
   
       32 . The method of  claim 27 , wherein the probe comprises an inspection probe, the method further comprising reviewing the defects by measuring a vibration of a review probe at locations of the defects, and wherein the review probe has a tip size that is smaller than a tip size of the inspection probe.  
   
   
       33 . The method of  claim 27 , wherein the defects comprise electrical defects.  
   
   
       34 . The method of  claim 27 , wherein the specimen comprises a patterned wafer.