Vertical-cavity surface-emitting laser (VCSEL) device and the method of manufacturing thereof

Abstract

A Vertical-Cavity Surface-Emitting Laser (VCSEL) device includes a substrate, a first semiconductor multi-layer film of a first conductive type formed on the substrate, an active layer, a second semiconductor multi-layer film of a second conductive type, an electrode pad electrically coupled to the second semiconductor multi-layer film, and a post structure formed on the substrate, the post structure comprising a light emitter, the post structure being continuously surrounded by a first groove, and a second groove being continuously formed outside of the first groove with respect to the post structure.

1 . A Vertical-Cavity Surface-Emitting Laser (VCSEL) device comprising: 
 a substrate;    a first semiconductor multi-layer film of a first conductive type formed on the substrate;    an active layer;    a second semiconductor multi-layer film of a second conductive type;    an electrode pad electrically coupled to the second semiconductor multi-layer film; and    a post structure formed on the substrate, the post structure comprising a light emitter,    the post structure being continuously surrounded by a first groove, and a second groove being continuously formed outside of the first groove with respect to the post structure.    
     
     
         2 . The VCSEL device according to  claim 1 , wherein the second groove is formed along a dicing plane of the substrate.  
     
     
         3 . The VCSEL device according to  claim 1 , wherein the second groove surrounds the post structure and the electrode pad in a rectangular shape.  
     
     
         4 . The VCSEL device according to  claim 1 , wherein the second groove surrounds the post structure and the electrode pad in a shape including a curve.  
     
     
         5 . The VCSEL device according to  claim 1 , wherein: 
 the post structure and the first groove are partially covered with an insulating protection film; and    the insulating protection film further covering at least part of the second groove.    
     
     
         6 . The VCSEL device according to  claim 1 , wherein: 
 the post structure and the first groove are partially covered with an insulating protection film; and    at least part of the second groove is covered with an other insulating protection film separated from the insulating protection film that covers the first groove.    
     
     
         7 . The VCSEL device according to  claim 1 , wherein the second groove has a depth that reaches at least from the second semiconductor multi-layer film to part of the first semiconductor multi-layer film.  
     
     
         8 . The VCSEL device according to  claim 1 , wherein the second groove has a depth that reaches at least from the second semiconductor multi-layer film to the substrate.  
     
     
         9 . The VCSEL device according to  claim 1 , wherein the second groove is formed simultaneously with the first groove, and has the same depth as that of the first groove.  
     
     
         10 . The VCSEL device according to  claim 1 , wherein the first groove is formed along an outer periphery of the post structure, a wiring electrode extracted from the post structure, and a pad electrode coupled to the wiring electrode.  
     
     
         11 . The VCSEL device according to  claim 1 , wherein: 
 the post structure and a pad-forming region isolated from the post structure by the first groove comprise the same semiconductor layers;    an upper electrode in which an emitting window is formed is formed on the semiconductor layers of the post structure;    an electrode pad is formed on the semiconductor layers of the pad-forming region; and    the upper electrode and the electrode pad being coupled to a wiring electrode through the first groove.    
     
     
         12 . The VCSEL device according to  claim 11 , comprising a third groove formed outside of the second groove, 
 wherein:    the third groove comprises a sidewall that defines an outer periphery of the pad-forming region; and    the sidewall being offset inward from a dicing plane of the substrate.    
     
     
         13 . The VCSEL device according to  claim 1 , wherein: 
 a plurality of post structures are formed on the substrate;    each of the post structures being surrounded by each of corresponding plurality of first grooves; and    the second groove is formed in a periphery outward from the plurality of first grooves.    
     
     
         14 . The VCSEL device according to  claim 1 , wherein the upper semiconductor multi-layer film and the lower semiconductor multi-layer film comprise Al-composition.  
     
     
         15 . A module having a VCSEL comprising: 
 a substrate;    a first semiconductor multi-layer film of a first conductive type formed on the substrate;    an active layer;    a second semiconductor multi-layer film of a second conductive type;    an electrode pad electrically coupled to the second semiconductor multi-layer film; and    a post structure formed on the substrate, the post structure comprising a light emitter,    the post structure being continuously surrounded by a first groove, and a second groove being continuously formed outside of the first groove with respect to the post structure.    
     
     
         16 . An optical transmission device having a VCSEL comprising: 
 a substrate;    a first semiconductor multi-layer film of a first conductive type formed on the substrate;    an active layer;    a second semiconductor multi-layer film of a second conductive type;    an electrode pad electrically coupled to the second semiconductor multi-layer film;    a post structure formed on the substrate, the post structure comprising a light emitter; and    a transmitting unit that transmits laser light emitted from the module through an optical medium,    the post structure being continuously surrounded by a first groove, and a second groove being continuously formed outside of the first groove with respect to the post structure.    
     
     
         17 . An optical spatial transmission device having a VCSEL comprising: 
 a substrate;    a first semiconductor multi-layer film of a first conductive type formed on the substrate;    an active layer;    a second semiconductor multi-layer film of a second conductive type;    an electrode pad electrically coupled to the second semiconductor multi-layer film;    a post structure formed on the substrate, the post structure comprising a light emitter; and    a transmitting unit that spatially transmits light emitted from the module,    the post structure being continuously surrounded by a first groove, and a second groove being continuously formed outside of the first groove with respect to the post structure.    
     
     
         18 . An optical transmission system having a VCSEL comprising: 
 a substrate;    a first semiconductor multi-layer film of a first conductive type formed on the substrate;    an active layer;    a second semiconductor multi-layer film of a second conductive type;    an electrode pad electrically coupled to the second semiconductor multi-layer film;    a post structure formed on the substrate, the post structure comprising a light emitter; and    a transmitting unit that transmits laser light emitted from the module,    the post structure being continuously surrounded by a first groove, and a second groove being continuously formed outside of the first groove with respect to the post structure.    
     
     
         19 . An optical spatial transmission system having a VCSEL comprising: 
 a substrate;    a first semiconductor multi-layer film of a first conductive type formed on the substrate;    an active layer;    a second semiconductor multi-layer film of a second conductive type;    an electrode pad electrically coupled to the second semiconductor multi-layer film;    a post structure formed on the substrate, the post structure comprising a light emitter; and    a transmitter that spatially transmits light emitted from the module,    the post structure being continuously surrounded by a first groove, and a second groove being continuously formed outside of the first groove with respect to the post structure.    
     
     
         20 . A method for manufacuturing a VCSEL device in which a light emitter of a post structure is formed on a substrate, the method comprising: 
 stacking semiconductor layers on the substrate, the semiconductor layers including at least a first semiconductor multi-layer film of a first conductive type, an active layer, and a second semiconductor multi-layer film of a second conductive type;    forming a first groove in the semiconductor layers so that the first groove surrounds at least the post structure;    forming a second groove in the semiconductor layers so that the second groove surrounds the first groove; and    dicing the substrate so that the second groove is remained.    
     
     
         21 . The manufacuturing method according to  claim 20 , wherein the first groove is formed along an outer periphery of the post structure, a wiring electrode extracted from the post structure, a pad electrode coupled to the wiring electrode.  
     
     
         22 . The manufacuturing method according to  claim 20  further comprising forming a third groove in the semiconductor layers, the third groove corresponding to a dicing region, 
 wherein the substrate is diced along the third groove.    
     
     
         23 . The manufacuturing method according to  claim 20  further comprising: 
 patern-forming a first insulating protection film that covers the post structure and the first groove; and    patern-forming a second insulating protection film that is isolated from the first insulating protection film and covers the second groove.    
     
     
         24 . A method for manufacuturing a VCSEL device in which a light emitter of a post structure is formed on a substrate, comprising: 
 stacking semiconductor layers on the substrate, the semiconductor layers including at least a first semiconductor multi-layer film of a first conductive type, an active layer, and a second semiconductor multi-layer film of a second conductive type;    forming a first groove and a second groove in the semiconductor layers, the first groove surrounding at least the post structure, and the second groove surrounding the first groove; and    dicing the substrate so that the second groove is remaind.    
     
     
         25 . The manufacuturing method according to  claim 24  further comprising forming an insulating protection film that covers the first groove and at least part of the second groove.  
     
     
         26 . The manufacuturing method according to  claim 24  further comprising forming a third groove in the semiconductor layers simultaneously with the formation of the first and the second grooves, wherein the third groove corresponds to a dicing region, and the substrate being diced along the third groove.