Chemical vapor deposition metallization processes and chemical vapor deposition apparatus used therein

Abstract

CVD metallization processes and CVD apparatus used therein are provided. The processes include forming a barrier metal layer on a semiconductor substrate and cooling the semiconductor substrate having the barrier metal layer without breaking vacuum. An additional metal layer may be formed on the cooled barrier metal layer. The in-situ cooling process is preferably performed inside a cooling chamber installed between first and second transfer chambers, which are separated from each other. The barrier metal layer may be formed inside a CVD process chamber attached to the first transfer chamber, and the additional metal layer may be formed inside another CVD process chamber attached to the second transfer chamber.

1 . A chemical vapor deposition (CVD) apparatus comprising: 
 first and second transfer chambers separated from each other;    at least one cooling chamber installed between the first and second transfer chambers;    a first CVD process chamber attached to the first transfer chamber; and    a second CVD process chamber attached to the second transfer chamber.    
   
   
       2 . The CVD apparatus according to  claim 1 , further comprising: 
 first and second load lock chambers attached to the first transfer chamber.    
   
   
       3 . The CVD apparatus according to  claim 1 , wherein the at least one cooling chamber includes a stage, and the stage includes a circulation conduit through which a cooling medium flows.  
   
   
       4 . The CVD apparatus according to  claim 1 , wherein the at least one cooling chamber having a chuck installed therein, and at least one cooling gas injection line for supplying a cooling gas thereto.  
   
   
       5 . The CVD apparatus according to  claim 1 , wherein the first CVD process chamber comprises a plasma CVD process chamber and/or a thermal CVD process chamber.  
   
   
       6 . The CVD apparatus according to  claim 1 , wherein the second CVD process chamber comprises a thermal CVD process chamber.  
   
   
       7 . The CVD apparatus according to  claim 1 , wherein a source gas injected into the first CVD process chamber is different from a source gas injected into the second CVD process chamber.