Method of manufacturing a semiconductor light emitting device, semiconductor light emitting device, method of manufacturing a semiconductor device, semiconductor device, method of manufacturing a device, and device

Abstract

When a semiconductor light emitting device or a semiconductor device is manufactured by growing nitride III-V compound semiconductor layers, which will form a light emitting device structure or a device structure, on a nitride III-V compound semiconductor substrate composed of a first region in form of a crystal having a first average dislocation density and a plurality of second regions having a second average dislocation density higher than the first average dislocation density and periodically aligned in the first region, device regions are defined on the nitride III-V compound semiconductor substrate such that the device regions do not substantially include second regions, emission regions or active regions of devices finally obtained do not include second regions.

1 . A semiconductor light emitting device manufactured by: 
 growing nitride III-V compound semiconductor layers forming a light emitting device structure on a nitride III-V compound semiconductor substrate in which a plurality of second regions having a second average dislocation density higher than a first average dislocation density align regularly in a first region made of a crystal and having the first average dislocation density; and    dicing the nitride III-V compound semiconductor substrate having the nitride III-V compound semiconductor layers grown thereon along border lines including at least neighboring two of the second regions.    
     
     
         2 . The semiconductor light emitting device of  claim 1 , wherein the semiconductor light emitting device is a laser diode.  
     
     
         3 . The semiconductor light emitting device of  claim 1 , wherein the semiconductor light emitting device is a light emitting diode.  
     
     
         4 . A semiconductor device manufactured by: 
 growing nitride III-V compound semiconductor layers forming a device structure on a nitride III-V compound semiconductor substrate in which a plurality of second regions having a second average dislocation density higher than a first average dislocation density align regularly in a first region made of a crystal and having the first average dislocation density; and    dicing the nitride III-V compound semiconductor substrate having the nitride III-V compound semiconductor layers grown thereon along border lines including at least neighboring two of the second regions.    
     
     
         5 . A semiconductor light emitting device manufactured by: 
 growing semiconductor layers forming a light emitting device structure on a semiconductor substrate in which a plurality of second regions having a second average dislocation density higher than a first average dislocation density align regularly in a first region made of a crystal and having the first average dislocation density; and    dicing the semiconductor substrate having the semiconductor layers grown thereon along border lines including at least neighboring two of the second regions.    
     
     
         6 . A semiconductor device manufactured by: 
 growing semiconductor layers forming a device structure on a semiconductor substrate in which a plurality of second regions having a second average dislocation density higher than a first average dislocation density align regularly in a first region made of a crystal and having the first average dislocation density; and    dicing the semiconductor substrate having the semiconductor layers grown thereon along border lines including at least neighboring two of the second regions.    
     
     
         7 . A device manufactured by: 
 growing layers forming a device structure on a substrate in which a plurality of second regions having a second average dislocation density higher than a first average dislocation density align regularly in a first region made of a crystal and having the first average dislocation density; and    dicing the substrate having the layers grown thereon along border lines including at least neighboring two of the second regions.