Immersion lithography fluid control system

Abstract

A pattern formation method includes the steps of forming a resist film on a substrate, performing pattern exposure by selectively irradiating the resist film with exposing light with a liquid provided on the resist film, and forming a resist pattern by developing the resist film after the pattern exposure. An electric field or a magnetic is applied to the liquid in the step of performing pattern exposure.

1 . A pattern formation method comprising the steps of: 
 forming a resist film on a substrate;    performing pattern exposure by selectively irradiating said resist film with exposing light with a liquid provided on said resist film; and    forming a resist pattern by developing said resist film after the pattern exposure,    wherein an electric field is applied to said liquid in the step of performing pattern exposure.    
   
   
       2 . The pattern formation method of  claim 1 , wherein said solvent is water or perfluoropolyether.  
   
   
       3 . The pattern formation method of  claim 1 , wherein said exposing light is KrF excimer laser, Xe 2  laser, ArF excimer laser, F 2  laser, KrAr laser or Ar 2  laser.  
   
   
       4 . A pattern formation method comprising the steps of: 
 forming a resist film on a substrate;    performing pattern exposure by selectively irradiating said resist film with exposing light with a liquid provided on said resist film; and    forming a resist pattern by developing said resist film after the pattern exposure,    wherein a magnetic field is applied to said liquid in the step of performing pattern exposure.