Semiconductor device and method of manufacturing the same

Abstract

The miniaturization of the system in package which laminates a plurality of semiconductor chips on a wiring substrate via a die attach film is promoted. In the system in package (SiP) which laminates memory chips and microcomputer chip via die attach film on wiring substrate, by forming metal plate in the chip mounting region of wiring substrate, and mounting memory chip of an undermost layer on this metal plate, the flatness of the chip mounting region of wiring substrate is secured, and die attach film which intervenes between metal plate and memory chip of an undermost layer is made the same quality as die attach film which intervenes between chips (between memory chips and between memory chip and microcomputer chips), and the same thickness.

1 . A semiconductor device with which a plurality of semiconductor chips are stacked via a die attach film over a main surface of a wiring substrate by which a plurality of wirings are formed in the main surface, and resin seal of the semiconductor chips is done, wherein 
 the semiconductor chip of an undermost layer among the plurality of semiconductor chips is mounted over a metal plate formed over the main surface of the wiring substrate via the die attach film; and    a thickness of the die attach film which intervenes between the semiconductor chip of the undermost layer and the wiring substrate is the same as a thickness of a die attach film which intervenes between a lower layer semiconductor chip and an upper semiconductor chip.    
     
     
         2 . A semiconductor device according to  claim 1 , wherein 
 a thickness of the die attach film is less than or equal to 25□m.    
     
     
         3 . A semiconductor device according to  claim 1 , wherein 
 the metal plate is functioning as a part of the wirings.    
     
     
         4 . A semiconductor device according to  claim 1 , wherein 
 the semiconductor chips include two or more kinds of semiconductor chips with which a mutually different integrated circuit was formed.    
     
     
         5 . A semiconductor device according to  claim 1 , wherein 
 a plurality of electrodes electrically connected to the wirings are formed over a back surface of the wiring substrate, and a solder bump which forms an external connection terminal is connected to each of the electrodes.    
     
     
         6 . A semiconductor device according to  claim 1 , wherein 
 the memory chips are electrically connected to the wiring via a metal wire.    
     
     
         7 . A semiconductor device with which a plurality of semiconductor chips are laminated via a die attach film over a main surface of a wiring substrate by which a plurality of wirings are formed in the main surface, and resin seal of the semiconductor chips is done, wherein 
 a semiconductor chip of an undermost layer is mounted via the die attach film among the semiconductor chips over a dummy chip formed over the main surface of the wiring substrate.    
     
     
         8 . A semiconductor device according to  claim 7 , wherein 
 a thickness of the die attach film which intervenes between the semiconductor chip of an undermost layer and the dummy chip is a same as a thickness of a die attach film which intervenes between a lower layer semiconductor chip and an upper semiconductor chip.    
     
     
         9 . A semiconductor device according to  claim 7 , wherein 
 a part of the wirings is formed in a lower part of the dummy chip.    
     
     
         10 . A semiconductor device according to  claim 7 , wherein 
 a thickness of the die attach film is less than or equal to 25□m.    
     
     
         11 . A semiconductor device according to  claim 7 , wherein 
 the semiconductor chips include two or more kinds of semiconductor chips with which a mutually different integrated circuit was formed.    
     
     
         12 . A semiconductor device according to  claim 7 , wherein 
 a plurality of electrodes electrically connected to the wirings are formed over a back surface of the wiring substrate, and a solder bump which forms an external connection terminal is connected to each of the electrodes.    
     
     
         13 . A method of manufacturing a semiconductor device which does a resin seal of a plurality of semiconductor chips after laminating the semiconductor chips via a die attach film over a main surface of a wiring substrate by which a plurality of wirings were formed in the main surface, comprising the steps of: 
 (a) mounting a first semiconductor chip over the main surface of the wiring substrate via a first die attach film; and    (b) mounting a second semiconductor chip over the first semiconductor chip via a second die attach film;    wherein the first semiconductor chip is mounted over a metal plate formed over the main surface of the wiring substrate via the first die attach film.    
     
     
         14 . A method of manufacturing a semiconductor device according to  claim 13 , wherein 
 a thickness of the first and the second die attach film is less than or equal to 25□m.    
     
     
         15 . A method of manufacturing a semiconductor device according to  claim 13 , wherein 
 the metal plate is functioning as a part of the wirings.    
     
     
         16 . A method of manufacturing a semiconductor device according to  claim 13 , wherein 
 the first and the second semiconductor chips are electrically connected to the wiring via a metal wire.    
     
     
         17 . A method of manufacturing a semiconductor device according to  claim 13 , wherein 
 the semiconductor chips include two or more kinds of semiconductor chips with which a mutually different integrated circuit was formed.    
     
     
         18 . A method of manufacturing a semiconductor device according to  claim 13 , wherein 
 a thickness of the first and the second die attach film is a same.    
     
     
         19 . A method of manufacturing a semiconductor device according to  claim 13 , wherein 
 a plurality of electrodes electrically connected to the wirings are formed in a back surface of the wiring substrate, and a step which connects a solder bump to each of the electrodes after the step (b) is included further.    
     
     
         20 . A method of manufacturing a semiconductor device which does a resin seal of a plurality of semiconductor chips after laminating the semiconductor chips via a die attach film over a main surface of a wiring substrate by which a plurality of wirings were formed in the main surface, comprising the steps of: 
 (a) mounting a dummy chip over the main surface of the wiring substrate;    (b) mounting a first semiconductor chip over the dummy chip a first die attach film; and    (c) mounting a second semiconductor chip over the first semiconductor chip via a second die attach film.    
     
     
         21 . A method of manufacturing a semiconductor device according to  claim 20 , wherein 
 a thickness of the first and the second die attach film is less than or equal to 25□m.    
     
     
         22 . A method of manufacturing a semiconductor device according to  claim 20 , wherein 
 a thickness of the first and the second die attach film is a same.    
     
     
         23 . A method of manufacturing a semiconductor device according to  claim 20 , wherein 
 the first and the second semiconductor chips are electrically connected to the wiring via a metal wire.    
     
     
         24 . A method of manufacturing a semiconductor device according to  claim 20 , wherein 
 a plurality of electrodes electrically connected to the wirings are formed over a back surface of the wiring substrate, and a step which connects a solder bump to each of the electrodes after the step (c) is included further.