US2007114649A1PendingUtilityA1

Low Profile Stacking System and Method

Assignee: STAKTEK GROUP L P A TEXAS LTDPriority: Oct 26, 2001Filed: Jan 23, 2007Published: May 24, 2007
Est. expiryOct 26, 2021(expired)· nominal 20-yr term from priority
H10W 70/60H10W 90/291H10W 72/60H10W 90/297H10W 72/877H10W 90/724H05K 1/189H05K 2201/10689H05K 3/363H05K 2201/056H05K 2201/10734H05K 1/147H05K 1/141H10W 72/07236H10W 72/07234H10W 72/241H10W 72/072H10W 72/01271H10W 72/251H10W 72/252H10W 72/20H10W 70/611H10W 90/701H10W 70/635H10W 70/688H10W 74/129H10W 90/00H05K 3/346
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Claims

Abstract

The present invention provides a system and method that mounts integrated circuit devices onto substrates and a system and method for employing the method is stacked modules. The contact pads of a packaged integrated circuit device are substantially exposed. A solder past that includes higher temperature solder paste alloy is applied to a substrate or to the integrated circuit device to be mounted. The integrated circuit device is positioned to contact the contacts of the substrate. Heat is applied to create high temperature joints between the contacts of the substrate and the integrated circuit device resulting in a device-substrate assembly with high temperature joints. The formed joints are less subject to re-melting in subsequent processing steps. The method may be employed in devising stacked module constructions such as those disclosed herein as preferred embodiments in accordance with the invention. Typically, the created joints are low in profile.

Claims

exact text as granted — not AI-modified
1 . A high temperature joint in a stacked circuit module in which a first integrated circuit element is disposed above a second integrated circuit element, the high temperature joint comprising: 
 an alloy comprised of lead and antimony having the proportion of no more that 95% tin and at least 5% antimony, the alloy having a melting point between 235° C. to 260° C.    
   
   
       2 . A high temperature joint in a stacked circuit module in which a first integrated circuit element is disposed above a second integrated circuit element, the high temperature joint comprising: 
 an alloy comprised of lead and tin, the alloy having a melting point between 275° C. 312° C.    
   
   
       3 . A high temperature joint in a stacked circuit module in which a first integrated circuit element is disposed above a second integrated circuit element, the high temperature joint comprising: 
 an alloy comprised of lead, the alloy having a melting point of between 235° C. and 312° C.

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