US2007114591A1PendingUtilityA1

Integrated circuit devices having a resistor pattern and plug pattern that are made from a same material

Assignee: LEE SUNG-BOKPriority: Jul 8, 2003Filed: Jan 17, 2007Published: May 24, 2007
Est. expiryJul 8, 2023(expired)· nominal 20-yr term from priority
H10D 84/817H10B 41/40H10D 84/209H10D 1/47H10D 84/811H10B 41/42H10B 41/41H10B 41/35
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Claims

Abstract

An integrated circuit device is formed by forming a resistor pattern on a substrate. An interlayer dielectric layer is formed on the resistor pattern. The interlayer dielectric layer is patterned to form at least one opening that exposes the resistor pattern. A plug pattern is formed that fills the at least one opening and the plug pattern and resistor pattern are formed using a same material.

Claims

exact text as granted — not AI-modified
1 . An integrated circuit device resistor, comprising: 
 a resistor pattern disposed on a substrate;    an interlayer dielectric layer disposed on the resistor pattern and having openings that expose ends of the resistor pattern; and    plug patterns disposed in the openings and connected to ends of the resistor pattern, wherein the plug patterns and the resistor pattern are comprised of a same material.    
   
   
       2 . The integrated circuit device resistor of  claim 1 , wherein the resistor pattern and the plug patterns comprise polysilicon.  
   
   
       3 . The integrated circuit device resistor of  claim 1 , wherein the resistor pattern is disposed on a device isolation layer that is disposed on the substrate to define an active region.  
   
   
       4 . The integrated circuit device resistor of  claim 1 , wherein the substrate further comprises cell gate patterns that comprise a floating gate electrode, the cell gate patterns being disposed in a cell array region; and 
 wherein the resistor pattern and the floating gate electrode comprise a same material.    
   
   
       5 . The integrated circuit device resistor of  claim 4 , further comprising: 
 a contact plug disposed in the cell array region that penetrates the interlayer dielectric layer to connect to the substrate, and    wherein the plug patterns and the contact plug comprise a same material.    
   
   
       6 . The integrated circuit device resistor of  claim 5 , wherein the contact plug and the plug patterns comprise polysilicon.

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