Apparatus and methods for slurry cleaning of etch chambers

Abstract

Described are methods of cleaning debris from semiconductor etch chambers or chamber components, one method comprising directing atomized abrasive slurry onto at least some internal surfaces of such a chamber or chamber components. Apparatus for carrying out the methods are also described.

1 . An apparatus for removing deposits from semiconductor etch chamber components without damaging the etch chamber components or coatings thereon comprising: 
 (a) an atomizing head having an abrasive slurry inlet, an atomizing fluid inlet, and an atomized abrasive slurry outlet, the atomizing head adapted to draw an abrasive slurry into the abrasive slurry inlet by negative pressure and to produce an atomized abrasive slurry;    (b) an abrasive slurry container fluidly connected to the abrasive slurry inlet and defining a space for the abrasive slurry comprising water and abrasive particles; and    (c) a source of atomizing fluid fluidly connected to the atomizing fluid inlet.    
     
     
         2 . The apparatus of  claim 1 , wherein the source of atomizing fluid is selected from a membrane unit, an absorption unit, a cryogenic unit, a container of fluid, a compressor, a pipeline, a gas cabinet, and combinations thereof.  
     
     
         3 . The apparatus of  claim 1  wherein the source of atomizing fluid comprises a source of one or more inert gases and combinations thereof.  
     
     
         4 . The apparatus of  claim 3  wherein the source of inert gas is selected from sources of nitrogen, argon, air, nitrogen enriched air, noble gases other than argon, and combinations and mixtures thereof.  
     
     
         5 . The apparatus of  claim 1 , wherein the atomizing head comprises a venturi.  
     
     
         6 . The apparatus of  claim 1 , wherein the abrasive slurry container comprises a mixing device.  
     
     
         7 . The apparatus of  claim 1  comprising a pressure regulator adapted to adjust pressure of the atomizing fluid.  
     
     
         8 . The apparatus of  claim 7  wherein the pressure regulator is adapted to adjust pressure of the atomized abrasive slurry.  
     
     
         9 . An apparatus for removing deposits from semiconductor etch chamber components without damaging the etch chamber components or coatings thereon comprising: 
 (a) a venturi having an abrasive slurry inlet, a gas inlet, and an atomized abrasive slurry outlet, the venturi adapted to draw an abrasive slurry into the abrasive slurry inlet by negative pressure and to produce an atomized abrasive slurry;    (b) an abrasive slurry container fluidly connected to the abrasive slurry inlet and defining a space for the abrasive slurry comprising water and abrasive particles;    (c) a source of gas fluidly connected to the gas inlet; and    (d) an agitator adapted to maintain the abrasive slurry well dispersed.    
     
     
         10 . A method comprising: 
 flowing an atomizing fluid through an atomizing head having an abrasive slurry inlet;    drawing abrasive slurry into the abrasive slurry inlet by negative pressure; and    directing the atomized abrasive slurry onto at least some internal surfaces of a semiconductor etching chamber.    
     
     
         11 . The method of  claim 10  wherein the abrasive slurry comprises abrasive particles selected from silicon dioxide, calcium oxide, pumice, aluminum oxide, titanium oxide, zirconium oxide, and combinations of thereof.  
     
     
         12 . The method of  claim 10  wherein the step of drawing abrasive slurry into the abrasive slurry inlet by negative pressure comprises drawing the abrasive slurry from an abrasive slurry container into the abrasive slurry inlet and dispensing atomized abrasive slurry through an atomized abrasive slurry outlet.  
     
     
         13 . The method of  claim 10  comprising the step of controlling pressure of the atomized abrasive slurry exiting the atomizing head.  
     
     
         14 . The method of  claim 13  wherein said controlling pressure comprises controlling pressure at a pressure ranging from about 25 to about 150 psig.  
     
     
         15 . The method of  claim 10  comprising the step of controlling density of the atomized abrasive slurry.  
     
     
         16 . The method of  claim 15  comprising controlling density from about 0.01 gm/cc to about 0.20 gm/cc.  
     
     
         17 . The method of  claim 12  comprising controlling momentum of the atomized abrasive slurry exiting the atomizing head.  
     
     
         18 . The method of  claim 17  comprising controlling momentum of the atomized abrasive slurry at momentum ranging from about 100,000 gm-cm/sec to about 300,000 gm-cm/sec.  
     
     
         19 . The method of  claim 12  comprising the step of maintaining the abrasive slurry in the abrasive slurry container in well dispersed state.  
     
     
         20 . The method of  claim 12  comprising the step of controlling composition of the abrasive slurry in the container.