Chemical sensor using chemically induced electron-hole production at a schottky barrier

Abstract

Electron-hole production at a Schottky barrier has recently been observed experimentally as a result of chemical processes. This conversion of chemical energy to electronic energy may serve as a basic link between chemistry and electronics and offers the potential for generation of unique electronic signatures for chemical reactions and the creation of a new class of solid state chemical sensors. Detention of the following chemical species was established: hydrogen, deuterium, carbon monoxide, molecular oxygen. The detector ( 1 b ) consists of a Schottky diode between an Si layer and an ultrathin metal layer with zero force electrical contacts.

1 . A method associated with chemisorption of a reactant on an ultrathin film comprising: 
 providing a reactant;    providing an ultrathin film formed from a material selected from the group consisting of conductors and semiconductors deposited on a silicon surface in a Schottky diode detector;    generating an incident stream of said reactant; and    generating a current associated with said incident stream on said ultrathin film so that a chemicurrent results from chemisorption of induced excited charge carriers which traverse a Schottky barrier in said Schottky diode detector.    
   
   
       2 . A method according to  claim 1  wherein the ultrathin film is formed from a conductor selected from the group consisting of the transition metals.  
   
   
       3 . A method according to  claim 1  wherein the ultrathin film is formed from a material selected from the group consisting of copper, silver, and gold.  
   
   
       4 . A method according to  claim 1  wherein the ultrathin film is formed from iron.  
   
   
       5 . A method according to  claim 1  wherein the ultrathin film is formed from a semiconductor.  
   
   
       6 . A method according to  claim 1  wherein the ultrathin film is formed from geranium.