Semiconductor laser diode and semiconductor laser diode assembly containing the same

Abstract

Provided is a semiconductor laser diode. The semiconductor laser diode includes a first material layer, an active layer, and a second material layer, characterized in that the semiconductor laser diode includes: a ridge waveguide, which is formed in a ridge shape over the second material layer to define a channel defined so that a top material layer of the second material layer is limitedly exposed, and in which a second electrode layer which is in contact with the top material layer of the second material layer via the channel is formed; and a first protrusion, which is positioned at one side of the ridge waveguide and has not less height than that of the ridge waveguide.

1 . A semiconductor laser diode assembly comprising a semiconductor laser diode comprising first and second material layers which are multi-material layers, and an active layer interposed between the first and second material layers to emit light; and a submount flip-chip bonded to the semiconductor laser diode, characterized in that the semiconductor laser diode comprises: 
 a ridge waveguide, which is formed in a ridge shape over the second material layer to define a channel so that a top material layer of the second material layer is limitedly exposed, and in which a second electrode layer which is in contact with the top material layer of the second material layer via the channel is formed;    a first protrusion, which is positioned at one side of the ridge waveguide and has not less height than that of the ridge waveguide; and    a second protrusion, which is positioned at the other side of the ridge waveguide and has not less height than that of the ridge waveguide and of which a top material layer is a first electrode layer electrically connected to a bottom material layer of the first material layer, and    the submount comprises:    a substrate;    a first solder layer bonded to the first protrusion and the ridge waveguide; and    a second solder layer bonded to the second protrusion, the first and second solder layers being formed on the substrate and having substantially the same thickness.    
   
   
       2 . The semiconductor laser diode assembly according to  claim 1 , wherein the second protrusion has a width wider than the width of the ridge waveguide.  
   
   
       3 . The semiconductor laser diode assembly according to  claim 1 , wherein the first and second protrusions have the same height.  
   
   
       4 . The semiconductor laser diode assembly according to a semiconductor laser diode assembly comprising a semiconductor laser diode comprising first and second material layers which are multi-material layers, and an active layer interposed between the first and second material layers to emit light; and a submount flip-chip bonded to the semiconductor laser diode, characterized in that the semiconductor laser diode comprises: 
 a ridge waveguide, which is formed in a ridge shape over the second material layer to define a channel so that a top material layer of the second material layer is limitedly exposed, and in which a second electrode layer which is in contact with the top material layer of the second material layer via the channel is formed;    a first protrusion, which is positioned at one side of the ridge waveguide and has not less height than that of the ridge waveguide; and    a first electrode layer, which is positioned at the other side of the ridge waveguide, has not less height than that of the ridge waveguide, and electrically connected to a bottom material layer of the first material layer, and    the submount comprises:    a substrate;    a first solder layer bonded to the first protrusion and the ridge waveguide; and    a second solder layer bonded to the first electrode layer, the first and second solder layers being formed on the substrate and having substantially the same thickness wherein the first protrusion and the first electrode layer have the same height.