Copper-based metal polishing solution and method for manufacturing semiconductor device

Abstract

Disclosed is a copper-based metal polishing solution which hardly dissolves a Cu film or a Cu alloy film when the film is dipped into the solution, and has a dissolution velocity during polishing several times higher than that during dipping. This copper-based metal polishing solution contains at least one acid selected from aminoacetic acid and aminosulfuric acid, an oxidizer, and water.

1 . A copper-based metal polishing composition, comprising: 
 an organic acid capable of reacting with copper to form a copper complex compound which is soluble in solution containing said organic acid and an oxidizer, and said oxidizer and water.    
   
   
       2 . The polishing composition according to  claim 1 , further comprising abrasive grains.  
   
   
       3 . A method for manufacturing a semiconductor device, comprising: 
 forming at least one member selected from the group consisting of a trench and an opening corresponding to a shape of an interconnecting layer in an insulating film on a semiconductor substrate,    forming an interconnection material film consisting of copper or a copper alloy on said insulating film including said at least one member selected from the group consisting of a trench and an opening; and    polishing said interconnection material film by using a polishing composition comprising an organic acid capable of reacting with copper to form a copper complex compound which is soluble in solution containing said organic acid and an oxidizer, and said oxidizer and water, thereby forming an interconnecting layer in said insulating film.    
   
   
       4 . The method for manufacturing a semiconductor device according to  claim 3 , wherein the polishing composition further comprises abrasive grains.  
   
   
       5 . A method for manufacturing a semiconductor device forming a multilayer interconnection structure, comprising: 
 forming a first opening corresponding to a shape of a first via fill in a first insulating film on a semiconductor substrate;    forming a first interconnection material film consisting of copper or a copper alloy on said first insulating film including said first opening;    polishing said first interconnection material film by using a first polishing composition comprising an organic acid capable of reacting with copper to form a copper complex compound which is soluble in solution containing said organic acid and an oxidizer, and said oxidizer and water, thereby forming said first via fill in said first opening;    forming a second insulating film on said first insulating film including said first via fill;    forming a second opening corresponding to a shape of a second via fill reached to said first via fill in said second insulating film;    forming a second interconnection material film consisting of copper or a copper alloy on said second insulating film including said second opening; and    polishing said second interconnection material film by using a second polishing composition comprising an organic acid capable of reacting with copper to form a copper complex compound which is soluble in solution containing said organic acid and an oxidizer, and said oxidizer and water, thereby forming a second via fill in said second opening.    
   
   
       6 . The method for manufacturing a semiconductor device according to  claim 5 , wherein the first polishing composition further comprises abrasive grains.  
   
   
       7 . The method for manufacturing a semiconductor device according to  claim 5 , wherein the second polishing composition further comprises abrasive grains.