Precursor compositions for the deposition of passive electronic features

Abstract

Precursor compositions for the fabrication of electronic features such as resistors and capacitors. The precursor compositions are formulated to have a low conversion temperature, such as not greater than about 350° C., thereby enabling the fabrication of such electronic features on a variety of substrates, including organic substrates such as polymer substrates.

1 . A process for forming a flat panel display resistive feature, comprising: 
 (a) direct printing a resistor precursor composition onto a substrate; and    (b) heating the resistor precursor composition to form the flat panel display resistive feature on the substrate.    
   
   
       2 . The process of  claim 1 , wherein the direct printing comprises syringe printing.  
   
   
       3 . The process of  claim 1 , wherein the direct printing comprises aerosol jet deposition.  
   
   
       4 . The process of  claim 1 , wherein the direct printing comprises ink jet printing.  
   
   
       5 . The process of  claim 4 , wherein the resistor precursor composition comprises at least one of resistive particles comprising a resistive material or a molecular precursor to a resistive phase.  
   
   
       6 . The process of  claim 5 , wherein the resistive material or resistive phase is selected from the group consisting of semiconducting oxides, ruthenium oxide, metal ruthenates including rutile, pyrochlore and perovskite phases of ruthenium, indium tin oxide, tin oxide, antimony oxide and zinc oxide.  
   
   
       7 . The process of  claim 5 , wherein the resistor precursor composition comprises the resistive particles comprising the resistive material, the resistive particles having an average particle size of not greater than about 100 nm.  
   
   
       8 . The process of  claim 4 , wherein the resistor precursor composition comprises a molecular precursor to an insulative phase and a powder of a resistive material.  
   
   
       9 . The process of  claim 4 , wherein the resistor precursor composition comprises a molecular precursor to a resistive phase and a powder of an insulative material.  
   
   
       10 . The process of  claim 4 , wherein the resistor precursor composition comprises at least one of metallic particles comprising a metal or a molecular precursor compound to the metal.  
   
   
       11 . The process of  claim 10 , wherein the metal is selected from the group consisting of silver, palladium, copper, gold, platinum and nickel.  
   
   
       12 . The process of  claim 10 , wherein the resistor precursor composition further comprises at least one of insulating particles comprising an insulating material or a molecular precursor to an insulating phase.  
   
   
       13 . The process of  claim 12 , wherein the insulating material or insulating phase is selected from the group consisting of silica, alumina, titania and a glass.  
   
   
       14 . The process of  claim 12 , wherein the insulating precursor composition comprises the insulating particles comprising the insulating material, the insulating particles having an average particle size of not greater than about 100 nm.  
   
   
       15 . The process of  claim 10 , wherein the resistor precursor composition further comprises at least one of resistive particles comprising a resistive material or a molecular precursor to a resistive phase.  
   
   
       16 . The process of  claim 15 , wherein the resistive material or the resistive phase is selected from the group consisting of semiconducting oxides, ruthenium oxide, metal ruthenates including rutile, pyrochlore and perovskite phases of ruthenium, indium tin oxide, tin oxide, antimony oxide and zinc oxide.  
   
   
       17 . The process of  claim 15 , wherein the resistor precursor composition comprises the resistive particles comprising the resistive material, the resistive particles having an average particle size of not greater than about 100 nm.  
   
   
       18 . The process of  claim 4 , wherein the flat panel display resistive feature has a resistivity of at least about 10,000 μΩ-cm.  
   
   
       19 . The process of  claim 4 , wherein the flat panel display resistive feature has a resistivity of at least about 100,000 μΩ-cm.  
   
   
       20 . The process of  claim 4 , wherein the flat panel display resistive feature has a resistivity of at least about 1,000,000 μΩ-cm.  
   
   
       21 . The process of  claim 4 , wherein the heating comprises heating to a temperature not greater than 300° C.  
   
   
       22 . The process of  claim 4 , wherein the heating comprises heating in air at from about 450° C. to 600° C.  
   
   
       23 . The process of  claim 4 , wherein the substrate comprises glass.  
   
   
       24 . The process of  claim 4 , wherein the substrate comprises a polymer.  
   
   
       25 . The process of  claim 4 , wherein the flat panel display resistive feature has a width less than 100 μm.  
   
   
       26 . The process of  claim 4 , wherein the flat panel display resistive feature comprises a metal-glass composition.  
   
   
       27 . The process of  claim 4 , wherein the flat panel display resistive feature comprises emissive pixels.  
   
   
       28 . The process of  claim 4 , wherein the process further comprises surface modifying the damaged solar cell with a laser.  
   
   
       29 . A process for forming a flat panel display resistive feature, the process comprising heating an ink jet printed resistor precursor composition to form the flat panel display resistive feature on a substrate.  
   
   
       30 . The process of  claim 29 , wherein the resistor precursor composition comprises at least one of resistive particles comprising a resistive material or a molecular precursor to a resistive phase.  
   
   
       31 . The process of  claim 30 , wherein the resistive material or resistive phase is selected from the group consisting of semiconducting oxides, ruthenium oxide, metal ruthenates including rutile, pyrochlore and perovskite phases of ruthenium, indium tin oxide, tin oxide, antimony oxide and zinc oxide.  
   
   
       32 . The process of  claim 30 , wherein the resistor precursor composition comprises the resistive particles comprising the resistive material, the resistive particles having an average particle size of not greater than about 100 nm.  
   
   
       33 . The process of  claim 29 , wherein the resistor precursor composition comprises a molecular precursor to an insulative phase and a powder of a resistive material.  
   
   
       34 . The process of  claim 29 , wherein the resistor precursor composition comprises a molecular precursor to a resistive phase and a powder of an insulative material.  
   
   
       35 . The process of  claim 29 , wherein the resistor precursor composition comprises at least one of metallic particles comprising a metal or a molecular precursor compound to the metal.  
   
   
       36 . The process of  claim 35 , wherein the metal is selected from the group consisting of silver, palladium, copper, gold, platinum and nickel.  
   
   
       37 . The process of  claim 35 , wherein the resistor precursor composition further comprises at least one of insulating particles comprising an insulating material or a molecular precursor to an insulating phase.  
   
   
       38 . The process of  claim 37 , wherein the insulating material or insulating phase is selected from the group consisting of silica, alumina, titania and a glass.  
   
   
       39 . The process of  claim 37 , wherein the insulating precursor composition comprises the insulating particles comprising the insulating material, the insulating particles having an average particle size of not greater than about 100 nm.  
   
   
       40 . The process of  claim 35 , wherein the resistor precursor composition further comprises at least one of resistive particles comprising a resistive material or a molecular precursor to a resistive phase.  
   
   
       41 . The process of  claim 40 , wherein the resistive material or the resistive phase is selected from the group consisting of semiconducting oxides, ruthenium oxide, metal ruthenates including rutile, pyrochlore and perovskite phases of ruthenium, indium tin oxide, tin oxide, antimony oxide and zinc oxide.  
   
   
       42 . The process of  claim 40 , wherein the resistor precursor composition comprises the resistive particles comprising the resistive material, the resistive particles having an average particle size of not greater than about 100 nm.  
   
   
       43 . The process of  claim 29 , wherein the flat panel display resistive feature has a resistivity of at least about 10,000 μΩ-cm.  
   
   
       44 . The process of  claim 29 , wherein the flat panel display resistive feature has a resistivity of at least about 100,000 μΩ-cm.  
   
   
       45 . The process of  claim 29 , wherein the flat panel display resistive feature has a resistivity of at least about 1,000,000 μΩ-cm.  
   
   
       46 . The process of  claim 29 , wherein the heating comprises heating to a temperature not greater than 300° C.  
   
   
       47 . The process of  claim 29 , wherein the heating comprises heating in air at from about 450° C. to 600° C.  
   
   
       48 . The process of  claim 29 , wherein the substrate comprises glass.  
   
   
       49 . The process of  claim 29 , wherein the substrate comprises a polymer.  
   
   
       50 . The process of  claim 29 , wherein the flat panel display resistive feature has a width less than 100 μm.  
   
   
       51 . The process of  claim 29 , wherein the flat panel display resistive feature comprises a metal-glass composition.  
   
   
       52 . The process of  claim 29 , wherein the flat panel display resistive feature comprises emissive pixels.