Method for reducing or eliminating semiconductor device wire sweep in a multi-tier bonding device and a device produced by the method

Abstract

A method of packaging a multi-tier wire bonded semiconductor device is provided. The method includes applying an insulative material across only a portion of at least two of a plurality of conductors per layer providing interconnection between elements in the multi-tier wire bonded semiconductor device. The method also includes encapsulating the conductors and elements, thereby packaging the semiconductor device.

1 . A semiconductor device comprising: 
 a plurality of semiconductor elements;    a plurality of conductors arranged in a multiple tier configuration providing interconnection between the plurality of semiconductor elements; and    an insulative material applied across only a portion of at least two of the plurality of conductors in at least two tiers of multiple tiers, the insulative material comprising insulative particles having a diameter smaller than a gap between adjacent ones of the conductors.    
     
     
         2 . The semiconductor device of  claim 1  further comprising an encapsulation layer encapsulating the conductors and elements for packaging the semiconductor device.  
     
     
         3 . The semiconductor device of  claim 1  wherein the plurality of semiconductor elements includes at least one semiconductor die having a plurality of first contacts, and a lead frame having a plurality of second contacts, the plurality of conductors providing interconnection between the plurality of first contacts and the plurality of second contacts.  
     
     
         4 . The semiconductor device of  claim 3  wherein the insulative material is disposed across the portion of the at least two of the plurality of conductors adjacent the semiconductor die.  
     
     
         5 . The semiconductor device of  claim 3  wherein the insulative material is disposed across the portion of the at least two of the plurality of conductors approximately midway between the semiconductor die and the leadframe.  
     
     
         6 . The semiconductor device of  claim 1  wherein the insulative material is a curable insulative material.  
     
     
         7 . The semiconductor device of  claim 1  wherein the insulative material has a bead or bead-like form.  
     
     
         8 . The semiconductor device of  claim 1  wherein the insulative material is at least one of a heat induced curable insulative material and a UV radiation curable insulative material.  
     
     
         9 . The semiconductor device of  claim 1  wherein the insulative material is comprised of a plurality of spherical silica particles.  
     
     
         10 . The semiconductor device of  claim 1  wherein the insulative material is applied around a peripheral portion of an inner element of the semiconductor device.  
     
     
         11 . The semiconductor device of  claim 1  wherein the insulative material is at least two distinct substantially circumferential structures around a peripheral portion of an inner element of the semiconductor device, the two structures not being in contact with one another.  
     
     
         12 . The semiconductor device of  claim 11  wherein at a first one of the at least two distinct substantially circumferential structures contacts a portion of the inner element and/or a second one of the at least two distinct substantially circumferential structures contacts a portion of a carrier supporting the inner element.  
     
     
         13 . A semiconductor device comprising: 
 at least one semiconductor element;    a carrier for supporting the at least one semiconductor element;    a plurality of conductors arranged in a multiple tier configuration providing interconnection between the at least one semiconductor element and the carrier; and    an insulative material comprising insulative particles having a diameter smaller than a desired predetermined gap between adjacent ones of the plurality of conductors, the insulative material applied across only a portion of at least two of the plurality of conductors in at least two tiers of the multiple tiers for reducing a potential for short circuiting between adjacent ones of the plurality of conductors.    
     
     
         14 . The semiconductor device of  claim 13  wherein the insulative material includes a polymer resin, and the insulative particles are silica particles.  
     
     
         15 . The semiconductor device of  claim 13  wherein the insulative material is at least partially cured by at least one of ultraviolet, visible, and infrared radiation.  
     
     
         16 . The semiconductor device of  claim 13  wherein the insulative particles occupy between 50 and 85 percent of the weight of the insulative material.  
     
     
         17 . The semiconductor device of  claim 13  wherein the insulative particles have a maximum diameter of 20 microns.  
     
     
         18 . The semiconductor device of  claim 13  wherein the insulative particles have a median diameter of approximately 4.5 microns.  
     
     
         19 . The semiconductor device of  claim 13  wherein the insulative particles have a mean diameter of approximately 4.1 microns.  
     
     
         20 . The semiconductor device of  claim 13  wherein the insulative particles provide insulated separation between at least two of the plurality of conductors.  
     
     
         21 . The semiconductor device of  claim 13  further comprising an encapsulation layer encapsulating the at least one semiconductor element, the carrier, the plurality of conductors, and the insulative material.  
     
     
         22 . The semiconductor device of  claim 21  wherein the encapsulation layer includes an overmold encapsulant.  
     
     
         23 . The semiconductor device of  claim 21  wherein the encapsulation layer includes a globtop encapsulant.  
     
     
         24 . The semiconductor device of  claim 21  wherein each of the plurality of conductors have a length at least 250 times greater than a diameter of the respective conductor.