Semiconductor device

Abstract

In order to supply a semiconductor device having high-reliability, there are used a first capacitor electrode, a capacitor insulating film formed in contact with the first capacitor electrode and mainly composed of titanium oxide, and a second capacitor electrode formed in contact with the capacitor insulating film, and there is used a conductive oxide film mainly composed of ruthenium oxide or iridium oxide for the first capacitor electrode and the second capacitor electrode. Alternatively, there is used a gate insulating film having a titanium silicate film and titanium oxide which suppress leakage current.

1 - 9 . (canceled)  
   
   
       10 . A semiconductor device comprising plural MOS transistors, each of which has a gate electrode formed through a gate insulating film on a semiconductor substrate; wherein said gate insulating film comprises a titanium silicate film formed on a surface of said semiconductor substrate and a titanium oxide film formed on the titanium silicate film.  
   
   
       11 . A semiconductor device comprising plural MOS transistors formed, each of which has a gate insulating film present between a semiconductor substrate and a gate electrode; wherein said gate insulating film is constituted by a laminated structure containing a titanium silicate film formed on said semiconductor substrate side and a titanium oxide film formed on said gate electrode side.  
   
   
       12 . The semiconductor device of  claim 10 , wherein a silicon-oxide equivalent thickness of said gate insulating film, which is obtained from dielectric characteristics, is not more than 1.0 nm.  
   
   
       13 . The semiconductor device of  claim 10 , wherein said titanium silicate film has a film thickness of not less than 1.0 nm but not more than 3.2 nm.  
   
   
       14 . The semiconductor device of  claim 10 , wherein a factual thickness, T 2 , of said titanium silicate film is in a range represented by  
       1.0 (nm)≦ T   2 ≦5 T   eff −1.8 (nm)  
     wherein T 2  represents the factual thickness of said titanium silicate film and T eff  represents the silicon-oxide equivalent thickness of said gate insulating film.  
   
   
       15 - 18 . (canceled)