US2007095786A1PendingUtilityA1
Selective reactive ion etching of wafers
Assignee: SYSTEMS ON SILICON MFG CO PTEPriority: Dec 23, 2004Filed: Dec 19, 2006Published: May 3, 2007
Est. expiryDec 23, 2024(expired)· nominal 20-yr term from priority
H10P 72/0421H10P 50/642H10P 50/242H10P 50/283H01J 37/32431
50
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Claims
Abstract
The invention comprises a device for assisting in the selective reactive ion etching of wafers comprising, a graphite base plate including an opening for housing a wafer, and a plurality of graphite strips that can be arranged over the graphite base plate to select a site of a wafer housed in the base plate for etching.
Claims
exact text as granted — not AI-modified1 .- 11 . (canceled)
12 . A method of selectively reactive ion etching a portion of a wafer comprising the steps of,
placing the wafer in a base plate, identifying the portion of the wafer to be etched, arranging a plurality of strips over the wafer and base plate to cover all portions of the wafer that are not to be etched and leave exposed the portion of the wafer to be etched, and
performing a reactive ion etch on the wafer.Join the waitlist — get patent alerts
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