Apparatus for cyclical depositing of thin films

Abstract

An apparatus for cyclical depositing of thin films on semiconductor substrates, comprising a process chamber having a gas distribution system with separate paths for process gases and an exhaust system synchronized with operation of valves dosing the process gases into a reaction region of the chamber.

1 . A gas distribution system for providing at least two gases to a processing chamber, comprising: 
 a lid assembly and a manifold comprising a first isolated flow path and a second isolated flow path, wherein the first isolated flow path includes an outlet in fluid communication with a central gas channel having a diameter that radially expands towards a showerhead coupled to the lid assembly;    a first high speed valve coupled to the manifold and in fluid communication with the first isolated flow path and a second high speed valve coupled to the manifold and in fluid communication with the second isolated flow path; and    a valved exhaust system in communication with and at least partially synchronized with the operation of at least the first high speed valve.    
   
   
       2 . The apparatus of  claim 1 , wherein first high speed valve and the second high speed valve is configured to pulse a precursor gas and continually flow a purge gas or a carrier gas.  
   
   
       3 . The apparatus of  claim 1 , wherein a plasma generator is coupled to the processing chamber.  
   
   
       4 . The apparatus of  claim 3 , wherein the plasma generator is a radio frequency source.  
   
   
       5 . The apparatus of  claim 3 , wherein the plasma generator is a microwave source.  
   
   
       6 . The apparatus of  claim 1 , wherein the showerhead comprises a central region having a plurality of slotted openings and an outer region having a plurality of apertures surrounding the plurality of slotted openings.  
   
   
       7 . The apparatus of  claim 6 , wherein the slotted openings are positioned to direct a substantially vertical gas flow along the axis of the central gas channel to a partially horizontal gas flow that is at least partially orthogonal to the axis of the central gas channel.  
   
   
       8 . The apparatus of  claim 1 , wherein a dispersion plate is positioned below the showerhead.  
   
   
       9 . A gas distribution system for providing at least two gases to a processing region in a processing chamber, comprising: 
 a valve assembly comprising a first high speed valve and a second high speed valve coupled to a manifold, wherein the manifold comprises: 
 a first isolated flow path; and  
 a second isolated flow path, wherein each of the first and second isolated flow paths comprises at least one precursor gas inlet;  
   a lid assembly, comprising: 
 a showerhead coupled to a lid plate, wherein the showerhead comprises a central region having slotted openings and an outer region having a plurality of apertures; and  
 a central gas channel passing through the lid plate, wherein the central gas channel includes an upper portion and a lower portion having an increasing diameter towards the showerhead; and  
   a valved exhaust system in communication with the operation of the first high speed valve and the second high speed valve, wherein each isolated flow path receives a precursor gas and a carrier gas that is pulsed to the processing region by the first high speed valve and the second high speed valve.    
   
   
       10 . The apparatus of  claim 9 , wherein a dispersion plate is positioned below the slotted openings.  
   
   
       11 . The apparatus of  claim 10 , wherein the dispersion plate is fixed to the showerhead.  
   
   
       12 . The apparatus of  claim 10 , wherein the dispersion plate is integral to the showerhead.  
   
   
       13 . The apparatus of  claim 9 , wherein the slotted openings are positioned to direct a substantially vertical gas flow along the axis of the central gas channel to a partially horizontal gas flow that is at least partially orthogonal to the axis of the central gas channel.  
   
   
       14 . The apparatus of  claim 9 , wherein a plasma generator is coupled to the processing chamber.  
   
   
       15 . The apparatus of  claim 14 , wherein the plasma generator is a radio frequency source.  
   
   
       16 . The apparatus of  claim 14 , wherein the plasma generator is a microwave source.  
   
   
       17 . A gas distribution system for providing at least two gases to a processing region in a processing chamber, comprising: 
 a valve assembly comprising a first high speed valve and a second high speed valve coupled to a manifold, wherein the manifold comprises: 
 a first isolated flow path; and  
 a second isolated flow path, wherein each of the first and second isolated flow paths comprises at least one precursor gas inlet;  
   a plasma source coupled to the at least one precursor inlet;    a lid assembly, comprising: 
 a showerhead coupled to a lid plate, wherein the showerhead comprises a central region having slotted openings and an outer region having a plurality of apertures; and  
 a central gas channel passing through the lid plate, wherein the central gas channel includes an upper portion and a lower portion having an increasing diameter towards the showerhead; and  
   a valved exhaust system in communication with the operation of the first high speed valve and the second high speed valve, wherein each isolated flow path receives a precursor gas and a carrier gas that is pulsed to the processing region by the first high speed valve and the second high speed valve.    
   
   
       18 . The apparatus of  claim 17 , wherein a dispersion plate is positioned below the slotted openings.  
   
   
       19 . The apparatus of  claim 18 , wherein the dispersion plate is fixed to the showerhead.  
   
   
       20 . The apparatus of  claim 17 , wherein the slotted openings are positioned to direct a substantially vertical gas flow along the axis of the central gas channel to a partially horizontal gas flow that is at least partially orthogonal to the axis of the central gas channel.