US2007092430A1PendingUtilityA1

Apparatus and method for manufacturing carbon nanotubes

Assignee: HON HAI PREC IND CO LTDPriority: Oct 21, 2005Filed: Apr 12, 2006Published: Apr 26, 2007
Est. expiryOct 21, 2025(expired)· nominal 20-yr term from priority
Inventors:Bor-Yuan Hsiao
B82Y 40/00B01J 2219/1941B82Y 30/00C01B 32/162B01J 2219/1942D01F 9/133B01J 2219/00135C01B 2202/08B01J 19/26B01J 4/002D01F 9/127B01J 2219/182B01J 2219/00139B01J 2219/00132
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Claims

Abstract

An apparatus for manufacturing carbon nanotubes is provided. The apparatus includes a reaction chamber having a first inlet configured for introducing a carbon-containing gas thereinto and a first outlet; a heater for elevating an interior temperature of the reaction chamber, wherein the reaction chamber is configured for accommodating a substrate and the first inlet defines a route for channeling the introduced carbon-containing gas toward the substrate, the route being substantially perpendicular to a main plane of the substrate.

Claims

exact text as granted — not AI-modified
1 . An apparatus for manufacturing carbon nanotubes, the apparatus comprising: 
 a reaction chamber having a first inlet configured for introducing a carbon-containing gas thereinto, and a first outlet; and    a heater for elevating an interior temperature of the reaction chamber, wherein the reaction chamber is configured for accommodating a substrate and the first inlet defines a route for channeling the introduced carbon-containing gas toward the substrate, the route being substantially perpendicular to a main plane of the substrate.    
     
     
         2 . The apparatus for manufacturing carbon nanotubes according to  claim 1 , wherein the reaction chamber has a shape selected from a group consisting of substantially semi-conical and hemispheric.  
     
     
         3 . The apparatus for manufacturing carbon nanotubes according to  claim 1 , wherein the first inlet is configured at a top of the reaction chamber and spatially corresponding to the substrate, and the first outlet is configured adjacent to a bottom of the reaction chamber.  
     
     
         4 . The apparatus for manufacturing carbon nanotubes according to  claim 1 , further comprising a gas guiding member for guiding the gas to flow perpendicularly toward the substrate.  
     
     
         5 . The apparatus for manufacturing carbon nanotubes according to  claim 4 , wherein the gas guiding member comprises a inverted-funnel portion having 
 a narrow opening coupled to the first inlet and an opposite wide opening spatially corresponding to the substrate.    
     
     
         6 . The apparatus for manufacturing carbon nanotubes according to  claim 4 , wherein the gas guiding member comprises a hemispherical portion having a narrow opening coupled to the first inlet and an opposite wide opening spatially corresponding to the substrate.  
     
     
         7 . The apparatus for manufacturing carbon nanotubes according to  claim 1 , further comprising a quartz tube, wherein the reaction chamber is received in the quartz tube, the quartz tube has a second inlet in communication with the first inlet and a second outlet in communication with the first outlet.  
     
     
         8 . The apparatus for manufacturing carbon nanotubes according to  claim 7 , further comprising a gas guiding pipe, wherein the second inlet is in communication with the first inlet via the gas guiding pipe.  
     
     
         9 . The apparatus for manufacturing carbon nanotubes according to  claim 7 , wherein the quartz tube is received in the heater.  
     
     
         10 . A method for manufacturing carbon nanotubes, the method comprising the steps of: 
 placing a substrate with a catalyst layer formed thereon in to a reaction chamber;    introducing a carrier gas into the reaction chamber;    heating the reaction chamber to a predetermined temperature;    introducing a carbon-containing gas into the reaction chamber and directing the carbon-containing gas to flow toward to the substrate along a direction that is substantially perpendicular to a main plane of the substrate.    
     
     
         11 . The method for manufacturing carbon nanotubes according to  claim 10 , wherein the carrier gas is selected from the group consisting of hydrogen gas, nitrogen gas, ammonia gas, and the like inert gases.  
     
     
         12 . The method for manufacturing carbon nanotubes according to  claim 10 , wherein the predetermined temperature is in the range from 500° C. to 900° C.  
     
     
         13 . The method for manufacturing carbon nanotubes according to  claim 10 , wherein the carbon-containing gas is selected from a group consisting of methane, ethane, ethylene, acetylene and a combination thereof.

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