Semiconductor light-emitting device and method of manufacturing the same

Abstract

A semiconductor light-emitting device capable of improving device characteristics such as life and reliability is provided. A current confinement layer includes a non-oxidized region made of AlAs or the like corresponding to a current injection region in an active layer, and an oxidized region made of aluminum oxide corresponding to a non-current injection region. The oxidized region is formed by forming a non-oxidized layer made of AlAs or the like and then oxidizing part of the non-oxidized layer at a temperature from 240° C. to less than 375° C. The thickness of the oxidized region is preferably from 10 nm to 1000 nm. The width of the one side of the oxidized region is one time or more of the width of the non-oxidized region or seven times or less thereof. The distance between current confinement layer and the active layer is preferably 50 nm or more, or 500 nm or less, and more preferably 180 nm or more.

1 - 13 . (canceled)  
     
     
         14 . A VCSEL comprising: 
 an active layer comprising a current injection region; and    a current confinement layer comprising (a) a non-oxidized region, said non oxidized region comprising a semiconductor corresponding to the current injection region in the active layer, and (b) an oxidized region contiguous to said unoxidized region having lower conductivity than the non-oxidized region and corresponding to a region other than the current injection region in the active layer,    wherein,    (i) the current confinement layer restricts the current injection region in the active layer;    (ii) the oxidized region of the current confinement layer is the product of a process comprising: 
 forming a non-oxidized layer of the semiconductor; and  
 oxidizing a part of the non-oxidized layer at a temperature of at least 240° C. and at most 375° C.; and  
   (iii) the width of the of the oxidized region on one side of the non-oxidized region is one time or more the width of the non-oxidized region.    
     
     
         15 . A VCSEL according to  claim 14 , wherein light generated in the active layer is emitted in a direction perpendicular to a laminated direction of the active layer and the current confinement layer.  
     
     
         16 . A VCSEL according to  claim 14 , wherein a thickness of the oxidized region in the laminated direction of the active layer and the current confinement layer is from 10 nm to 1000 nm.  
     
     
         17 . A VCSEL according to  claim 14 , wherein a thickness of the oxidized region in the laminated direction of the active layer and the current confinement layer is from 30 nm to 60 nm.  
     
     
         18 . A VCSEL according to  claim 14 , wherein the width of the oxidized region on one side of the non-oxidized region is one time or more the width of the non-oxidized region.  
     
     
         19 . A VCSEL according to  claim 14 , wherein the width of the oxidized region on one side of the non-oxidized region is seven times or less of the width of the non-oxidized region.  
     
     
         20 . A VCSEL according to  claim 14 , wherein the active layer comprises Group III-V compound semiconductor which comprises at least one element selected from the group consisting of aluminum (Al), gallium (Ga) and indium (In) and at least one element selected from the group consisting of nitride nitrogen (N), phosphorus (P) and arsenic (As).  
     
     
         21 . A VCSEL according to  claim 14 , wherein the non-oxidized region comprises a Group III-V compound semiconductor which comprises aluminum (Al) and arsenic (As), and the oxidized region comprises an insulating oxide which comprises aluminum (Al).  
     
     
         22 . A VCSEL according to  claim 14 , wherein a distance between the current confinement layer and the active layer is 50 nm or more.  
     
     
         23 . A VCSEL according to  claim 14 , wherein a distance between the current confinement layer and the active layer is 180 nm or more.  
     
     
         24 . A VCSEL according to  claim 14 , wherein a distance between the current confinement layer and the active layer is 500 nm or less.  
     
     
         25 . A VCSEL according to  claim 14 , further comprising three mesas, wherein the width of the middle mesa is at least 3 μm to at most 50 μm.  
     
     
         26 . A VCSEL according to  claim 14 , further comprising: 
 (a) a middle layer, and    (b) a cladding layer,    wherein,    the middle layer is between the current confinement layer and the cladding layer.