US2007090404A1PendingUtilityA1

Process for the fabrication of thin-film device and thin-film device

Assignee: KINOSHITA TOMOATSUPriority: Feb 25, 2003Filed: Dec 7, 2006Published: Apr 26, 2007
Est. expiryFeb 25, 2023(expired)· nominal 20-yr term from priority
A61H 2203/0456A61H 2201/025A61H 2201/0161A61N 2005/066A61H 33/063A61H 2033/061A61F 7/007A61H 2201/0228H10D 30/0321H10D 86/60H10D 86/40H10D 30/6758H10D 30/6715H10D 30/0314H10D 86/0214G02F 1/13613H10K 59/12
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Claims

Abstract

A thin-film device is fabricated by forming a protective layer and a thin-film device layer one by one on a first substrate and bonding a second substrate on the thin-film device layer via a first adhesive layer or a coating layer and first adhesive layer, removing the first substrate at least in a part thereof by etching with a chemical solution, bonding the protective layer, which covers the thin-film device layer on a side of the first substrate, to a third substrate via a second adhesive layer, and removing the second substrate. The protective layer is formed of at least two layers having resistance to the chemical solution used upon removal of the first substrate.

Claims

exact text as granted — not AI-modified
1 . A thin-film device formed by performing the following steps: 
 forming a protective layer and a thin-film device layer one by one on a first substrate, and bonding a second substrate on said thin-film device layer via at least a first adhesive layer,    removing said first substrate at least in a part thereof by etching with a chemical solution,    bonding said protective layer, which covers said thin-film device layer on a side of said first substrate, to a third substrate via a second adhesive layer, and    removing said second substrate;    wherein said protective layer is formed of at least two layers having resistance to said chemical solution used upon removal of said first substrate.    
   
   
       2 . The process for the fabrication of a thin-film device as claimed in  claim 1 , wherein said second substrate is bonded on said thin-film device layer via a coating layer and said first adhesive layer.  
   
   
       3 . A thin-film device formed by performing the following steps: 
 forming a protective layer and a thin-film device layer one by one on a first substrate, and bonding a second substrate on said thin-film device layer via at least a first adhesive layer,    separating said first substrate at least in a part thereof by etching with a chemical solution,    bonding said protective layer, which covers said thin-film device layer on a side of said first substrate, to a third substrate via a second adhesive layer, and    separating said second substrate;    wherein said protective layer is formed of at least two layers having resistance to said chemical solution used upon separation of said first substrate.    
   
   
       4 . The process for the fabrication of a thin-film device as claimed in  claim 3 , wherein said second substrate is bonded on said thin-film device layer via a coating layer and said first adhesive layer.

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