Semiconductor light-emitting device and method of manufacturing the same

Abstract

A semiconductor light-emitting device capable of improving device characteristics such as life and reliability is provided. A current confinement layer includes a non-oxidized region made of AlAs or the like corresponding to a current injection region in an active layer, and an oxidized region made of aluminum oxide corresponding to a non-current injection region. The oxidized region is formed by forming a non-oxidized layer made of AlAs or the like and then oxidizing part of the non-oxidized layer at a temperature from 240° C. to less than 375° C. The thickness of the oxidized region is preferably from 10 nm to 1000 nm. The width of the one side of the oxidized region is one time or more of the width of the non-oxidized region or seven times or less thereof. The distance between current confinement layer and the active layer is preferably 50 nm or more, or 500 nm or less, and more preferably 180 nm or more.

1 - 13 . (canceled)  
     
     
         14 . A method for manufacturing a semiconductor light-emitting device, said light-emitting device comprising: 
 an active layer; and    a current confinement layer restricting a current injection region in the active layer and being provided on a side of the active layer, the current confinement layer comprising: 
 a non-oxidized region made of a semiconductor corresponding to the current injection region in the active layer; and  
 an oxidized region having lower conductivity than the non-oxidized region corresponding to a region other than the current injection region in the active layer,  
 wherein,  
 the width of the oxidized region on one side of the non-oxidized region is one time or more of the width of the non-oxidized region;  
   the method comprising: 
 forming a plurality of semiconductor layers including the active layer and a second layer on a substrate; and  
 oxidizing part of the second layer at a temperature of at least 240° C. to at most 375° C.  
   
     
     
         15 . The method according to  claim 14 , wherein light generated in the active layer is emitted to a direction perpendicular to a laminated direction of the active layer and the current confinement layer.  
     
     
         16 . The method according to  claim 14 , wherein a thickness of the oxidized region in the laminated direction of the active layer and the current confinement layer is from 10 nm to 1000 nm.  
     
     
         17 . The method according to  claim 14 , wherein a thickness of the oxidized region in the laminated direction of the active layer and the current confinement layer is from 30 nm to 60 nm.  
     
     
         18 . The method according to  claim 14 , wherein the non-oxidized region and the current injection region in the current confinement layer are formed in strip shape and the oxidized region is formed in strip shape on both sides of the non-oxidized region.  
     
     
         19 . The method according to  claim 18 , wherein the width of the oxidized region on one side of the non-oxidized region is one time or more of the width of the non-oxidized region.  
     
     
         20 . The method according to  claim 18 , wherein the width of the oxidized region on one side of the non-oxidized region is seven times or less of the width of the non-oxidized region.  
     
     
         21 . The method according to  claim 14 , wherein the active layer comprises a Group III-V compound semiconductor which comprises: 
 (a) at least one element selected from the group consisting of aluminum (Al), gallium (Ga) and indium (In); and    (b) at least one element selected from the group consisting of (N), phosphorus (P) and arsenic (As).    
     
     
         20 . The method according to  claim 14 , wherein, 
 the non-oxidized region comprises a Group III-V compound semiconductor which comprises aluminum (Al) and arsenic (As); and    the oxidized region comprises an insulating oxide which comprises aluminum (Al).    
     
     
         21 . The method according to  claim 14 , wherein a distance between the current confinement layer and the active layer is 50 nm or more.  
     
     
         22 . The method according to  claim 14 , wherein a distance between the current confinement layer and the active layer is 180 nm or more.  
     
     
         23 . The method according to claim  1 , wherein a distance between the current confinement layer and the active layer is 500 nm or less.  
     
     
         24 . The method according to  claim 14 , wherein said semiconductor light-emitting device further comprises three mesas, the width of the middle mesa being at least 3 μm to at most 50 μm.  
     
     
         25 . The method according to  claim 14 , the semiconductor light-emitting device according to claim further comprising: 
 (a) a middle layer; and    (b) a cladding layer,    wherein,    the middle layer is between the current confinement layer and the cladding layer.