Interconnect structure

Abstract

An interconnect structure is described, disposed on a substrate with a conductive part thereon and including a first porous low-k layer on the substrate, a damascene structure in the first porous low-k layer electrically connecting with the conductive part, a second porous low-k layer over the first porous low-k layer and the damascene structure, and a UV-absorption layer at least between the first and the second porous low-k layers.

1 . An interconnect structure, disposed on a substrate with a conductive part thereon and comprising: 
 a first porous low-k layer on the substrate;    a damascene structure in the first porous low-k layer, electrically connecting with the conductive part;    a second porous low-k layer over the first porous low-k layer and the damascene structure; and    a first UV-absorption layer at least between the first and the second porous low-k layers.    
   
   
       2 . The interconnect structure of  claim 1 , wherein the first UV-absorption layer is further disposed between the damascene structure and the second porous low-k layer.  
   
   
       3 . The interconnect structure of  claim 2 , further comprising an etching stop layer between the first UV-absorption layer and the second porous low-k layer.  
   
   
       4 . The interconnect structure of  claim 2 , further comprising an etching stop layer disposed on the first porous low-k layer and the damascene structure and under the first UV-absorption layer.  
   
   
       5 . The interconnect structure of  claim 1 , wherein the damascene structure is disposed in the first UV-absorption layer and the first porous low-k layer.  
   
   
       6 . The interconnect structure of  claim 5 , further comprising an etching stop layer disposed on the first UV-absorption layer and the damascene structure and under the second porous low-k layer.  
   
   
       7 . The interconnect structure of  claim 1 , wherein the first UV-absorption layer comprises a material selected from nitrogen-containing compounds, carbon-containing compounds and oxygen-containing compounds.  
   
   
       8 . The interconnect structure of  claim 7 , wherein the first UV-absorption layer comprises silicon oxynitride (SiON).  
   
   
       9 . The interconnect structure of  claim 1 , wherein the first UV-absorption layer comprises a composite layer.  
   
   
       10 . The interconnect structure of  claim 1 , wherein the first UV-absorption layer has a thickness of about 100 Å to about 1000 Å.  
   
   
       11 . The interconnect structure of  claim 1 , wherein the substrate excluding the conductive part comprises a porous low-k material, further comprising a second UV-absorption layer at least between the porous low-k material and the first porous low-k layer.  
   
   
       12 - 20 . (canceled)