Capping of copper structures in hydrophobic ild using aqueous electro-less bath

Abstract

Capping of copper structures in hydrophobic interlayer dielectric layer, using aqueous electro-less bath is described herein.

1 . An apparatus comprising: 
 a chamber adapted for cobalt deposition, including a holder to hold a substrate with a hydrophobic interlayer dielectric layer; and    a sonic energy generator coupled to the chamber and adapted to allow sonic energy be applied during deposition of cobalt to cap a number of copper structures disposed on the hydrophobic interlayer dielectric layer.    
   
   
       2 . The apparatus of  claim 1 , wherein the apparatus further comprises at least one tank coupled to the chamber and adapted to store and to provide the interlayer dielectric layer with an aqueous electro-less bath; and the sonic energy generator is also adapted to allow sonic energy be applied during the provision of the aqueous electro-less bath.  
   
   
       3 . The apparatus of  claim 1 , wherein the sonic energy generator is adapted to apply a selected one of mega and ultra sonic energy.  
   
   
       4 . The apparatus of  claim 1 , wherein the sonic energy generator is adapted to apply the sonic energy at a frequency range of 10 to 1200 kilohertz.  
   
   
       5 . The apparatus of  claim 1 , wherein the sonic energy generator is adapted to apply the sonic energy at a power level in a range of 1 to 5 watts/cm 2 .  
   
   
       6 . An apparatus comprising: 
 a chamber including a holder to hold a substrate with a hydrophobic interlayer dielectric layer;    at least one tank coupled to the chamber and adapted to store and to provide the interlayer dielectric layer with an aqueous electro-less bath; and    a sonic energy generator coupled to the chamber and adapted to allow sonic energy be applied during the provision of the aqueous electro-less bath.    
   
   
       7 . The apparatus of  claim 6 , wherein the sonic energy generator is adapted to apply a selected one of mega and ultra sonic energy.  
   
   
       8 . The apparatus of  claim 6 , wherein the sonic energy generator is adapted to apply the sonic energy at a frequency range of 10 to 1200 kilohertz.  
   
   
       9 . The apparatus of  claim 6 , wherein the sonic energy generator is adapted to apply the sonic energy at a power level in a range of 1 to 5 watts/cm 2 .  
   
   
       10 . An apparatus comprising: 
 a hydrophobic interlayer dielectric layer substantially free of adhered cobalt particles;    a copper structure disposed on the interlayer dielectric layer; and a cobalt capping layer disposed on a top surface of the copper structure.    
   
   
       11 . The apparatus of  claim 10 , wherein the hydrophobic interlayer dielectric layer has a low K value where K is a dielectric constant lower than 3.5.  
   
   
       12 . A system comprising: 
 a semiconductor package comprising a die, the die having 
 a hydrophobic interlayer dielectric layer that is substantially free of adhered cobalt, and a plurality of cobalt capped copper structures disposed on the interlayer dielectric layer;  
   a bus coupled to the semiconductor package; and    a network interface module coupled to the bus.    
   
   
       13 . The system of  claim 12 , wherein the semiconductor package comprises a semiconductor device selected from a semiconductor device group consisting of a microprocessor, a memory device, a graphics processor, a digital signal processor, and a crypto processor.  
   
   
       14 . The system of  claim 13 , wherein the system is a selected one of a a digital versatile disk player, an audio/video media player, and a set-top box.