Semiconductor device and a method of manufacturing the same

Abstract

A semiconductor device manufacturing technique which allows reduction of semiconductor chip size. First, a pad and other wires are formed over an insulating film. A surface protective film is formed over the insulating film including the pad and wires, and an opening is made in the surface protective film. The opening lies over the pad and exposes a surface of the pad. A bump electrode is formed over the surface protective film including the opening. Here, the pad is smaller than the bump electrode. Consequently, the wires are arranged just beneath the bump electrode in the same layer as the pad 10 . In other words, the wires are arranged in space which becomes available because the pad is small enough.

1 . A semiconductor device which includes a semiconductor chip comprising: 
 (a) a pad formed over a semiconductor substrate;    (b) an insulating film having an opening over the pad; and    (c) a bump electrode formed over the insulating film including the opening,    wherein the pad is smaller than the bump electrode, and    wherein a wire different from the pad is formed in a layer under the bump electrode through the insulating film.    
   
   
       2 . The semiconductor device according to  claim 1 , wherein the wire different from the pad includes a dummy wire.  
   
   
       3 . The semiconductor device according to  claim 1 , wherein the wire different from the pad includes a signal wire or power wire.  
   
   
       4 . The semiconductor device according to  claim 1 , wherein the wire different from the pad is formed in the same layer as the pad.  
   
   
       5 . The semiconductor device according to  claim 1 , wherein a plurality of the wires different from the pad exist.  
   
   
       6 . The semiconductor device according to  claim 1 , wherein the bump electrode extends in a prescribed direction.  
   
   
       7 . The semiconductor device according to  claim 1 , wherein the bump electrodes are arranged in a zigzag pattern.  
   
   
       8 . The semiconductor device according to  claim 5 , wherein the width of the pad is smaller than the width of a given wire included in the wires different from the pad.  
   
   
       9 . A semiconductor device which includes a semiconductor chip comprising: 
 (a) a pad formed over a semiconductor substrate;    (b) an insulating film having an opening over the pad; and    (c) a bump electrode formed over the insulating film including the opening,    wherein the pad is smaller than the bump electrode, and    wherein the bump electrode includes a first portion with a small width and a second portion with a width larger than the width of the first portion.    
   
   
       10 . The semiconductor device according to  claim 9 , wherein the bump electrode includes: 
 (c 1 ) a pad connection portion to be connected with the pad;    (c 2 ) a terminal connection portion to be connected with a terminal of a packaging substrate in mounting the semiconductor chip over the packaging substrate; and    (c 3 ) a wiring portion which connects the pad connection portion and the terminal connection portion.    
   
   
       11 . The semiconductor device according to  claim 10 , wherein the first portion is the wring portion and the second portion is the terminal connection portion.  
   
   
       12 . The semiconductor device according to  claim 10 , wherein the pad connection portion and the terminal connection portion do not overlap as seen in a plan view.  
   
   
       13 . The semiconductor device according to  claim 9 , wherein the wire different from the pad is formed in a layer under the bump electrode through the insulating film.  
   
   
       14 . The semiconductor device according to  claim 13 , wherein the wire different from the pad is formed in the same layer as the pad.  
   
   
       15 . The semiconductor device according to  claim 1 , wherein the semiconductor chip is a driver for a liquid crystal display.  
   
   
       16 . A method of manufacturing a semiconductor device comprising the steps of: 
 (a) forming, in a layer over a semiconductor substrate, a pad and a wire which is different from the pad;    (b) forming an insulating film over the pad and the wire different from the pad    (c) making an opening in the insulating film to expose a surface of the pad; and    (d) forming a bump electrode over the insulating film including the opening,    wherein the pad and the wire different from the pad are formed in a layer under the bump electrode through the insulating film.    
   
   
       17 . A method of manufacturing a semiconductor device comprising the steps of: 
 (a) forming a pad over a semiconductor substrate;    (b) forming an insulating film over the pad;    (c) making an opening in the insulating film to expose a surface of the pad; and    (d) forming a bump electrode over the insulating film including the opening,    wherein the bump electrode includes a first portion with a small width and a second portion with a width larger than the width of the first portion.    
   
   
       18 . The semiconductor device manufacturing method according to  claim 17 , wherein the bump electrode includes a pad connection portion to be connected with the pad, a terminal connection portion to be connected with a terminal of a packaging substrate, and a wiring portion to connect the pad connection portion and the terminal connection portion, and the first portion is the wiring portion and the second portion is the terminal connection portion.  
   
   
       19 . The semiconductor device manufacturing method according to  claim 18 , wherein the pad connection portion and the terminal connection portion do not overlap as seen in a plan view.  
   
   
       20 . The semiconductor device manufacturing method according to  claim 16 , further comprising the steps of: 
 (e) separating the semiconductor substrate into pieces to obtain semiconductor chips; and    (f) mounting the semiconductor chip over a packaging substrate with the bump electrode.    
   
   
       21 . The semiconductor device manufacturing method according to  claim 20 , wherein the packaging substrate is a glass substrate.  
   
   
       22 . The semiconductor device manufacturing method according to  claim 20 , wherein the packaging substrate is a tape substrate.