Semiconductor device

Abstract

A silicide film is formed between a ferroelectric capacitor structure, which is formed by sandwiching a ferroelectric film between a lower electrode and an upper electrode, and a conductive plug (the conductive material constituting the plug is tungsten (W) for example). Here, an example is shown in which a base film of the conductive plug is the silicide film.

1 . A semiconductor device, comprising: 
 a semiconductor substrate;    a conductive structure formed above said semiconductor substrate;    conductive plugs electrically connected to said conductive structure; and    base films having conductivity and each constituted of a silicide material, said base films covering from bottom faces to side faces of said conductive plugs respectively and being sandwiched between said conductive structure and said conductive plugs at portions of the bottom faces.    
     
     
         2 . The semiconductor device according to  claim 1 , 
 wherein the silicide material contains at least one type selected from titanium silicide, cobalt silicide, molybdenum silicide, niobium silicide, tantalum silicide, tungsten silicide, and vanadium silicide.    
     
     
         3 . The semiconductor device according to  claim 1 , further comprising 
 a conductive protection film which inhibits permeation of hydrogen, said conductive protection film being arranged above said base films or below said base films.    
     
     
         4 . The semiconductor device according to  claim 3 , 
 wherein said conductive protection film which inhibits permeation of hydrogen contains at least one type selected from titanium nitride, titanium silicon nitride, tantalum nitride, chromium nitride, hafnium nitride, zirconium nitride, titanium aluminum nitride, tantalum aluminum nitride, chromium aluminum nitride, and hafnium aluminum nitride.    
     
     
         5 . A semiconductor device, comprising: 
 a semiconductor substrate;    a conductive structure formed above said semiconductor substrate;    conductive plugs electrically connected to said conductive structure; and    conductive layers each containing a conductive material having conductivity even when oxidized, said conductive layers formed between said conductive structure and said conductive plugs.    
     
     
         6 . The semiconductor device according to  claim 5 , 
 wherein the conductive material contains at least one type selected from silver, nickel, cuprum, zinc, indium, tin, iridium, ruthenium, rhodium, palladium, and osmium.    
     
     
         7 . The semiconductor device according to  claim 5 , further comprising 
 a conductive protection film which inhibits permeation of hydrogen, said conductive protection film being arranged above said conductive layers or below said conductive layers.    
     
     
         8 . The semiconductor device according to  claim 7 , 
 wherein said conductive protection film which inhibits permeation of hydrogen contains at least one type selected from titanium nitride, titanium silicon nitride, tantalum nitride, chromium nitride, hafnium nitride, zirconium nitride, titanium aluminum nitride, tantalum aluminum nitride, chromium aluminum nitride, and hafnium aluminum nitride.    
     
     
         9 . The semiconductor device according to  claim 1 , 
 wherein said conductive structure has a noble metal layer in an upper layer part thereof, and    wherein the noble metal layer includes a catalyst poisoning material which inhibits catalytic activity of the noble metal.    
     
     
         10 . The semiconductor device according to  claim 9 , 
 wherein the catalyst poisoning material contains at least one type selected from carbon monoxide, chlorine compound, sulfur compound, phosphorous compound, and silicon compound.    
     
     
         11 . A semiconductor device, comprising: 
 a semiconductor substrate;    a conductive structure formed above said semiconductor substrate and having a noble metal layer in an upper layer part thereof; and    conductive plugs electrically connected to said conductive structure,    wherein the noble metal layer includes a catalyst poisoning material which inhibits catalytic activity of the noble metal.    
     
     
         12 . The semiconductor device according to  claim 11 , 
 wherein the catalyst poisoning material contains at least one type selected from carbon monoxide, chlorine compound, sulfur compound, phosphorous compound, and silicon compound.    
     
     
         13 . The semiconductor device according to  claim 11 , further comprising 
 a conductive protection film which inhibits permeation of hydrogen, said conductive protection film arranged above said conductive structure.    
     
     
         14 . The semiconductor device according to  claim 13 , 
 wherein said conductive protection film which inhibits permeation of hydrogen contains at least one type selected from titanium nitride, titanium silicon nitride, tantalum nitride, chromium nitride, hafnium nitride, zirconium nitride, titanium aluminum nitride, tantalum aluminum nitride, chromium aluminum nitride, and hafnium aluminum nitride.    
     
     
         15 . The semiconductor device according to  claim 11 , 
 wherein said conductive plugs are provided above said conductive structure.    
     
     
         16 . The semiconductor device according to  claim 11 , 
 wherein said conductive plugs are provided above and below said conductive structure respectively.    
     
     
         17 . The semiconductor device according to  claim 11 , 
 wherein said conductive structure is a capacitor structure constituted by sandwiching a ferroelectric film between a lower electrode and an upper electrode.    
     
     
         18 . The semiconductor device according to  claim 11 , further comprising 
 a capacitor structure constituted by sandwiching a ferroelectric film between a lower electrode and an upper electrode, and    wherein said conductive structure is a wire.    
     
     
         19 . The semiconductor device according to  claim 17 , 
 wherein the ferroelectric film is constituted of a ferroelectric material having a ferroelectric property.    
     
     
         20 . A method of manufacturing a semiconductor device, comprising the steps of: 
 forming a conductive structure above a semiconductor substrate;    forming an insulating film which covers the conductive structure;    forming in the insulating film openings which expose part of a surface of the conductive structure;    forming base films each constituted of a silicide material so as to cover inner wall surfaces of the openings respectively; and    forming conductive plugs by filling up the openings with a conductive material via the base films.    
     
     
         21 . The method of manufacturing a semiconductor device according to  claim 20 , 
 wherein the silicide material contains at least one type selected from titanium silicide, cobalt silicide, molybdenum silicide, niobium silicide, tantalum silicide, tungsten silicide, and vanadium silicide.    
     
     
         22 . The method of manufacturing a semiconductor device according to  claim 20 , further comprising the step of 
 forming a conductive protection film which inhibits permeation of hydrogen above the base films or below the base films.    
     
     
         23 . The method of manufacturing a semiconductor device according to  claim 22 , 
 wherein the conductive protection film which inhibits permeation of hydrogen contains at least one type selected from titanium nitride, titanium silicon nitride, tantalum nitride, chromium nitride hafnium nitride, zirconium nitride, titanium aluminum nitride, tantalum aluminum nitride, chromium aluminum nitride, and hafnium aluminum nitride.    
     
     
         24 . A method of manufacturing a semiconductor device, comprising the steps of: 
 forming a conductive structure above a semiconductor substrate;    forming a conductive layer containing a conductive material having conductivity even when oxidized above the conductive structure;    forming an insulating film so as to cover the conductive structure and the conductive layer;    forming in the insulating film openings which expose part of a surface of the conductive structure; and    forming conductive plugs by filling up the openings with a conductive material.    
     
     
         25 . The method of manufacturing a semiconductor device according to  claim 24 , 
 wherein the conductive material contains at least one type selected from silver, nickel, cuprum, zinc, indium, tin, iridium, ruthenium, rhodium, palladium, and osmium.    
     
     
         26 . The method of manufacturing a semiconductor device according to  claim 24 , further comprising the step of 
 forming a conductive protection film which inhibits permeation of hydrogen above the conductive layer or below the conductive layer.    
     
     
         27 . The method of manufacturing a semiconductor device according to  claim 26 , 
 wherein the conductive protection film which inhibits permeation of hydrogen contains at least one type selected from titanium nitride, titanium silicon nitride, tantalum nitride, chromium nitride, hafnium nitride, zirconium nitride, titanium aluminum nitride, tantalum aluminum nitride, chromium aluminum nitride, and hafnium aluminum nitride.    
     
     
         28 . The method of manufacturing a semiconductor device according to  claim 20 , 
 wherein the conductive structure has a noble metal layer in an upper layer part thereof, and    wherein, to the noble metal layer, a catalyst poisoning material which inhibits catalytic activity of the noble metal is added.    
     
     
         29 . The method of manufacturing a semiconductor device according to  claim 28 , 
 wherein, when the noble metal layer is formed by a chemical vapor deposition method, the noble metal layer is formed using a growing gas to which the catalyst poisoning material is added.    
     
     
         30 . The method of manufacturing a semiconductor device according to  claim 28 , further comprising the step of 
 contacting, after the noble metal layer is formed, the noble metal layer with a gas including the catalyst poisoning material.    
     
     
         31 . The method of manufacturing a semiconductor device according to  claim 28 , 
 wherein the catalyst poisoning material contains at least one type selected from carbon monoxide, chlorine compound, sulfur compound, phosphorous compound, and silicon compound.    
     
     
         32 . A method of manufacturing a semiconductor device, comprising the steps of: 
 forming a conductive structure having a noble metal layer in an upper layer part thereof above a semiconductor substrate;    forming an insulating film so as to cover the conductive structure;    forming in the insulating film openings which expose part of a surface of the conductive structure; and    forming conductive plugs by filling up the openings with a conductive material,    wherein, to the noble metal layer, a catalyst poisoning material which inhibits catalytic activity of the noble metal is added.    
     
     
         33 . The method of manufacturing a semiconductor device according to  claim 32 , 
 wherein, when the noble metal layer is formed by a physical vapor deposition method, the noble metal layer is formed using a growing gas to which the catalyst poisoning material is added.    
     
     
         34 . The method of manufacturing a semiconductor device according to  claim 32 , 
 wherein, when the noble metal layer is formed by a physical vapor deposition method, the noble metal layer is formed using a noble metal target to which the catalyst poisoning material is added.    
     
     
         35 . The method of manufacturing a semiconductor device according to  claim 32 , further comprising the step of 
 contacting, after the noble metal layer is formed, the noble metal layer with a gas including the catalyst poisoning material.    
     
     
         36 . The method of manufacturing a semiconductor device according to  claim 32 , further comprising the step of 
 contacting, after the noble metal layer is formed and the noble metal layer is patterned, the noble metal layer with a gas including the catalyst poisoning material.    
     
     
         37 . The method of manufacturing a semiconductor device according to  claim 32 , 
 wherein the catalyst poisoning material contains at least one type selected from carbon monoxide, chlorine compound, sulfur compound, phosphorous compound, and silicon compound.    
     
     
         38 . The method of manufacturing a semiconductor device according to  claim 32 , further comprising the step of 
 forming a conductive protection film which inhibits permeation of hydrogen above the conductive structure.    
     
     
         39 . The method of manufacturing a semiconductor device according to  claim 38 , 
 wherein the conductive protection film which inhibits permeation of hydrogen contains at least one type selected from titanium nitride, titanium silicon nitride, tantalum nitride, chromium nitride, hafnium nitride, zirconium nitride, titanium aluminum nitride, tantalum aluminum nitride, chromium aluminum nitride, and hafnium aluminum nitride.    
     
     
         40 . The method of manufacturing a semiconductor device according to  claim 20 , 
 wherein the conductive structure is a capacitor structure constituted by sandwiching a ferroelectric film between a lower electrode and an upper electrode.    
     
     
         41 . The method of manufacturing a semiconductor device according to  claim 20 , further comprising the step of 
 forming a capacitor structure constituted by sandwiching a ferroelectric film between a lower electrode and an upper electrode, and    wherein the conductive structure is a wire.    
     
     
         42 . The method of manufacturing a semiconductor device according to  claim 40 , 
 wherein the ferroelectric film is constituted of a ferroelectric material having a ferroelectric property.