Plating apparatus and manufacturing process for semiconductor device

Abstract

The present invention is to provide a plating apparatus and a process for manufacturing a semiconductor device whereby passivation of an anode can be prevented and reduction in a current efficiency and a deposition rate of a plating film can be prevented. A plating apparatus 1 has a plating bath 11 which contains a plating solution; an anode 12 and a cathode 13 within the plating bath 11 ; and a switching control unit 16 which switches between a first state where a current is applied between a plating object 2 in contact with the plating solution and the anode 12 and a second state where a current is interrupted between the plating object 2 and the anode 12 while applying a current between the anode 12 and the cathode 13. The anode 12 is a soluble electrode containing a metal capable of being passivated.

1 . A plating apparatus, comprising 
 a plating bath which contains a plating solution;    an anode and a cathode within the plating bath; and    a switching control unit which switches between a first state where a current is applied between a plating object in contact with the plating solution and the anode and a second state where a current is interrupted between the plating object and the anode while applying a current between the anode and the cathode.    
   
   
       2 . The plating apparatus as claimed in  claim 1 , wherein the anode is a soluble electrode containing a metal capable of being passivated.  
   
   
       3 . The plating apparatus as claimed in  claim 2 , wherein the metal capable of being passivated is a metal selected from the group consisting of nickel, cobalt, chromium and titanium.  
   
   
       4 . The plating apparatus as claimed in  claim 1 , wherein the cathode is disposed between the anode and the plating object when the plating object is placed within the plating bath; and 
 the cathode has through-holes penetrating the surfaces of the anode side and the plating object side.    
   
   
       5 . The plating apparatus as claimed in  claim 1 , comprising a current control unit controlling a current between the plating object and the anode and a current between the anode and the cathode, wherein the current control unit controls a current such that a current between the anode and the cathode in the second state is lower than a current between the plating object and the anode in the first state.  
   
   
       6 . A process for manufacturing a semiconductor device where a semiconductor substrate having a conductor film on or over its surface as a plating object is placed in a plating bath which is filled with a plating solution and in which an anode and a cathode are disposed and then a plating film is formed on the conductor film, comprising 
 applying a current between the plating object and the anode by contacting the plating object with the plating solution; and    interrupting the current between the plating object and the anode while applying a current between the anode and the cathode.