Active semiconductor devices

Abstract

Apparatus including a support body; an organic semiconductor composition body on the support body; and a first body including a hydrogenated vinylaromatic-diene block copolymer on the organic semiconductor composition body. Apparatus including a support body; a first body including a hydrogenated vinylaromatic-diene block copolymer on the support body; and an organic semiconductor composition body on the first body. Techniques for making apparatus.

1 . An apparatus, comprising: 
 a support body;    an organic semiconductor composition body on said support body; and    a first body comprising a hydrogenated vinylaromatic-diene block copolymer on said organic semiconductor composition body.    
   
   
       2 . The apparatus of  claim 1 , further including: 
 a second organic dielectric composition body on said first body.    
   
   
       3 . The apparatus of  claim 1  in which the vinylaromatic-diene block copolymer includes styrene and butadiene.  
   
   
       4 . The apparatus of  claim 1  in which the first body has a dielectric constant within a range of between about 1.1 and about 3.0.  
   
   
       5 . The apparatus of  claim 1  in which the second organic dielectric composition body has a dielectric constant of at least about 3.0.  
   
   
       6 . The apparatus of  claim 1 , in which a degree of hydrogenation of diene moieties of the block copolymer is at least about 97%; and a degree of hydrogenation of vinylaromatic moieties of the block copolymer is at least about 90%.  
   
   
       7 . An apparatus, comprising: 
 a support body;    a first body comprising a hydrogenated vinylaromatic-diene block copolymer on said support body; and    an organic semiconductor composition body on said first body.    
   
   
       8 . The apparatus of  claim 7 , further including: 
 a second organic dielectric composition body interposed between the support body and the first body.    
   
   
       9 . The apparatus of  claim 7  in which the vinylaromatic-diene block copolymer includes styrene and butadiene.  
   
   
       10 . The apparatus of  claim 7  in which the first body has a dielectric constant within a range of between about 1.1 and about 3.0.  
   
   
       11 . The apparatus of  claim 7  in which the second organic dielectric composition body has a dielectric constant of at least about 3.0.  
   
   
       12 . The apparatus of  claim 7 , in which a degree of hydrogenation of diene moieties of the block copolymer is at least about 97%; and a degree of hydrogenation of vinylaromatic moieties of the block copolymer is at least about 90%.  
   
   
       13 . A process comprising the steps of: 
 providing an organic semiconductor composition body on a support body;    providing a hydrogenated vinylaromatic-diene block copolymer; and    depositing a first body comprising said hydrogenated vinylaromatic-diene block copolymer on said organic semiconductor composition body.    
   
   
       14 . The process of  claim 13  including the step of mobilizing the hydrogenated vinylaromatic-diene block copolymer in at least one n-alkane having between about 4 and about 12 carbon atoms.  
   
   
       15 . The process of  claim 14  including the step of forming an ink having a viscosity within a range of between about 5000 mPas and about 100,000 mPas.  
   
   
       16 . The process of  claim 13 , further including the step of: 
 forming a second organic dielectric composition body on said first body.    
   
   
       17 . The process of  claim 13  in which the vinylaromatic-diene block copolymer includes styrene and butadiene.  
   
   
       18 . The process of  claim 13  in which the first body has a dielectric constant within a range of between about 1.1 and about 3.0.  
   
   
       19 . The process of  claim 13  in which the second organic dielectric composition body has a dielectric constant of at least about 3.0.  
   
   
       20 . The process of  claim 13  in which a degree of hydrogenation of diene moieties of the block copolymer is at least about 97%; and a degree of hydrogenation of vinylaromatic moieties of the block copolymer is at least about 90%.