Plasma ethching apparatus and plasma etching process

Abstract

A plasma etching apparatus includes: a chamber capable of reducing pressure; a substrate support provided inside the chamber to place a substrate; a first electrode which is arranged outside and in proximity to the chamber and to which high frequency power is applied to generate plasma of an etching gas in the chamber; and a second electrode comprising a plurality of separated electrodes which are arranged between the chamber and the first electrode and to each of which high frequency power is applied independently.

1 . A plasma etching apparatus comprising: 
 a chamber capable of reducing pressure;    a substrate support provided inside the chamber to place a substrate;    a first electrode which is arranged outside and in proximity to the chamber and to which high frequency power is applied to generate plasma of an etching gas in the chamber; and    a second electrode comprising a plurality of separated electrodes which are arranged between the chamber and the first electrode and to each of which high frequency power is applied independently.    
   
   
       2 . A plasma etching apparatus according to  claim 1 , wherein the substrate support is arranged such that the surface of the substrate placed thereon is opposed to the second electrode, and 
 the second electrode comprises the plurality of separated electrodes combined concentrically.    
   
   
       3 . A plasma etching apparatus according to  claim 2 , wherein the second electrode comprises the plurality of separated electrodes each having a circular circumference.  
   
   
       4 . A plasma etching apparatus comprising: 
 a chamber capable of reducing pressure;    a substrate support provided inside the chamber to place a substrate;    a first electrode which is arranged outside and in proximity to the chamber and to which high frequency power is applied to generate plasma of an etching gas in the chamber;    a second electrode which is arranged between the chamber and the first electrode and to which high frequency power is applied; and    a drive mechanism for moving the second electrode between the chamber and the first electrode along a wall of the chamber.    
   
   
       5 . A plasma etching apparatus comprising: 
 a chamber capable of reducing pressure;    a substrate support provided inside the chamber to place a substrate;    a first electrode which is arranged outside and in proximity to the chamber and to which high frequency power is applied to generate plasma of an etching gas in the chamber;    a second electrode which is arranged between the chamber and the first electrode and to which high frequency power is applied;    a detection means for detecting an etching reaction product adhered to part of an inner wall of the chamber opposing to the second electrode; and    a drive mechanism for moving the second electrode between the chamber and the first electrode along a wall of the chamber in response to an etching reaction product detection signal from the detection means.    
   
   
       6 - 17 . (canceled)