Semiconductor device and method for manufacturing the same
Abstract
There is provided a semiconductor device in which the junction strength of land portions and external terminals is increased, the disconnection of the external terminal is surely prevented, and the connection reliability is ensured over an extended period of time. An insulating resin layer which insulates metal wires from one another is formed on a semiconductor element, an end portion of the metal wire is connected to an electrode on the semiconductor element, the other end portion of the metal wire is connected to an external terminal to form a land, the entire surface of the semiconductor element except the connecting portions of the lands is covered with a surface-layer resin layer, and a projection is provided on the top surface of a land portion of at least one of the lands. Because of this, after their soldering, the external terminal holds the perimeter of the projection on the land portion, so that the external terminal can be surely connected to the land portion. As a result, the semiconductor device which ensures their connection reliability over an extended period of time can be obtained.
Claims
exact text as granted — not AI-modified1 . A method for manufacturing a semiconductor device, comprising:
forming an insulating resin layer, which insulates metal wires from one another, on a semiconductor element; connecting an end portion of the metal wire to an electrode on the semiconductor element; connecting the other end portion of the metal wire to an external terminal to form a land; forming a plating-resist having openings, which have a forward-tapered side, on at least one of the lands; and forming projections, which have a reverse-tapered side, in the openings by electroplating.
2 . A method for manufacturing a semiconductor device, comprising:
forming an insulating resin layer, which insulates metal wires form one another, on a semiconductor element; connecting an end portion of the metal wire to an electrode on the semiconductor element; connecting the other end portion of the metal wire to an external terminal to form a land; forming a plating resist having an opening on at least one of the lands; and forming projections having a shape that at least a part of its upper portion overhangs its lower portion by depositing a metal in the openings by means of electroplating to the extent that the metal is thicker than the plating resist.
3 . A method for manufacturing a semiconductor device, comprising:
forming an insulating resin layer, which insulates metal wires from one another, on a semiconductor element; connecting an end potion of the metal wire to an electrode on the semiconductor element; connecting the other end portion of the metal wire to an external terminal to form a land; forming resin projections, which have a reverse-tapered side, on at least a portion of the resins corresponding to the land portions at the forming process of the resin film; and forming a projection partly in the land portion by forming the land portion on the resin projection at the metal deposition and plating, process for forming the metal wires.Join the waitlist — get patent alerts
Track US2007072405A1 — get alerts on status changes and closely related new filings.
We store only your email — no account needed. See our privacy policy.