US2007070725A1PendingUtilityA1

Internal voltage supplying device

Assignee: HYNIX SEMICONDUCTOR INCPriority: Sep 29, 2005Filed: Sep 27, 2006Published: Mar 29, 2007
Est. expirySep 29, 2025(expired)· nominal 20-yr term from priority
Inventors:Chang-Ho Do
G11C 5/145G11C 5/143
40
PatentIndex Score
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Claims

Abstract

An internal voltage supplying device includes a level sensing means for sensing a level of a high voltage with respect to a core voltage, an oscillation signal generating means for generating an oscillation signal controlled by the level sensing means, and a pumping means for pumping charges during an activation interval of the oscillation signal to generate the high voltage having a level higher than a level of the core voltage, by a level of a threshold voltage or higher.

Claims

exact text as granted — not AI-modified
1 . An internal voltage supplying device, comprising: 
 a level sensing means for sensing a level of a high voltage with respect to a core voltage;    an oscillation signal generating means for generating an oscillation signal controlled by the level sensing means; and    a pumping means for pumping charges during an activation interval of the oscillation signal to generate the high voltage having a level higher than a level of the core voltage, by a level of a threshold voltage or higher.    
   
   
       2 . The internal voltage supplying device of  claim 1 , wherein the level sensing means comprises: 
 a first feedback unit dividing the core voltage to output a first feedback voltage;    a second feedback unit dividing the high voltage to output a second feedback voltage;    a comparator comparing a level of the second feedback voltage with respect to the first feedback voltage; and    a buffer buffering an output signal of the comparator to output a level signal.    
   
   
       3 . The internal voltage supplying device of  claim 2 , wherein the first feedback unit comprises: first and second resistors coupled in series between the core voltage and a ground voltage; and a capacitor coupled to a connect node of the first and second resistors, wherein the first feedback unit outputs a voltage caught on the connect node as the first feedback voltage.  
   
   
       4 . The internal voltage supplying device of  claim 2 , wherein the first feedback unit comprises: a plurality of resistors coupled in series between the core voltage and a ground voltage; and a plurality of capacitors, each capacitor coupled to a respective connect node of the resistors coupled in series, wherein the first feedback unit outputs one of voltages caught on the connect nodes as the first feedback voltage.  
   
   
       5 . The internal voltage supplying device of  claim 2 , wherein the first feedback unit comprises: a plurality of resistors coupled in series between the core voltage and a ground voltage; and a capacitor coupled to one of connect nodes of the resistors, wherein the first feedback unit outputs a voltage caught on the connect node coupled to the capacitor as the first feedback voltage.  
   
   
       6 . The internal voltage supplying device of  claim 2 , wherein the second feedback unit comprises first and second resistors coupled in series between the high voltage and a ground voltage.  
   
   
       7 . The internal voltage supplying device of  claim 6 , wherein the comparator comprises a differential amplifier having the second feedback voltage and the first feedback voltage as differential inputs.  
   
   
       8 . The internal voltage supplying device of  claim 7 , wherein the resistors comprise a passive device.  
   
   
       9 . The internal voltage supplying device of  claim 7 , wherein the resistors comprise an active device.  
   
   
       10 . An internal voltage supplying device, comprising: 
 a reference voltage generating means for generating a first feedback voltage having a predetermined voltage ratio with respect to a core voltage;    an adjusting means for adjusting the voltage ratio; and    a voltage generating means for supplying a high voltage having a level higher than a level of the core voltage by the level of a threshold voltage or higher and for maintaining said level of the high voltage in accordance with the first feedback voltage.    
   
   
       11 . The internal voltage supplying device of  claim 10 , wherein the reference voltage generating means comprises: 
 a dividing unit to divide the core voltage into various levels and to output a plurality of dividing voltages; and    a selection unit to select one of the dividing voltages, as controlled by the adjusting means, and to output the selected dividing voltage as the first feedback voltage.    
   
   
       12 . The internal voltage supplying device of  claim 11 , wherein the dividing unit comprises a plurality of resistors coupled in series and is to output voltages caught on each connect node of the resistors as the dividing voltages.  
   
   
       13 . The internal voltage supplying device of  claim 12 , further comprising a plurality of capacitors coupled to connect nodes of the resistors, respectively.  
   
   
       14 . The internal voltage supplying device of  claim 12 , wherein the adjusting means comprises a decoder to decode a test mode signal and output the decoded test mode signal as a selection signal.  
   
   
       15 . The internal voltage supplying device of  claim 12 , wherein the adjusting means comprises: 
 a plurality of fuse option units, each fuse option unit comprising a fuse; and    a decoder to decode a signal corresponding to blowing states of the fuses of the fuse option units and to output the decoded signal as a selection signal.    
   
   
       16 . The internal voltage supplying device of  claim 12 , wherein the adjusting means comprises: 
 a setup unit to sense setups of a plurality of fuse option units and test mode signals, and to output a plurality of setup signals; and    a decoder to decode the setup signals to output a selection signal.    
   
   
       17 . The internal voltage supplying device of  claim 16 , wherein the setup unit comprises: 
 NOR gates each having an output signal of a respective fuse option unit and a respective test mode signal as inputs; and    inverters to invert output signals of the NOR gates to output the setup signals.    
   
   
       18 . The internal voltage supplying device of  claim 17 , wherein the voltage generating means comprises: 
 a level sensing unit to sense a level of the high voltage with respect to the first feedback voltage to output a level signal;    an oscillation signal generating unit to generate an oscillation signal in response to the level signal; and    a pumping unit pumping to charge during an activation interval of the oscillation signal to output a high voltage.    
   
   
       19 . The internal voltage supplying device of  claim 18 , wherein the level sensing unit comprises: 
 a feedback unit to divide the high voltage to output a second feedback voltage;    a comparator to compare a level of the second feedback voltage with respect to the first feedback voltage; and    a buffer to buffer an output signal of the comparator to output the level signal.    
   
   
       20 . The internal voltage supplying device of  claim 19 , wherein the comparator comprises a differential amplifier having the second feedback voltage and the first feedback voltage as differential inputs.  
   
   
       21 . The internal voltage supplying device of  claim 20 , wherein the feedback unit comprises first and second resistors coupled in series and is to output a voltage caught on a connect node of the first and second resistors as the second feedback voltage.  
   
   
       22 . The internal voltage supplying device of  claim 21 , wherein the resistors comprise a passive device.  
   
   
       23 . The internal voltage supplying device of  claim 21 , wherein the resistors comprise a transistor.  
   
   
       24 . A method for operating an internal voltage supplying device, comprising: 
 generating a first feedback voltage having a predetermined voltage ratio with respect to a core voltage;    generating a second feedback voltage having a predetermined voltage ratio with respect to a high voltage; and    generating the high voltage having a level raised higher than a level of the core voltage by the level of a threshold voltage or higher, while maintaining a level of the second feedback voltage to correspond to the first feedback voltage, wherein the core voltage is used for storing data of a logic level in a cell, and the high voltage is used for activating the cell to allow the data to be transferred.    
   
   
       25 . The method of  claim 24 , wherein the maintaining of the level of the second feedback voltage to correspond to the first feedback voltage comprises: 
 comparing the level of the second feedback voltage with the first feedback voltage; and    performing a charge pumping to raise the level of the second feedback voltage when the second feedback voltage is lower than the first feedback voltage.    
   
   
       26 . The method of  claim 25 , wherein the predetermined voltage ratios are controlled by test mode signals or fuse option units.  
   
   
       27 . A semiconductor memory device, comprising: 
 a high voltage generating circuit to generate a high voltage having a voltage level higher than a power supply voltage by a first voltage level;    a core voltage generating circuit to generate a core voltage having a voltage level lower than the power supply voltage by a second voltage level;    a level sensing unit to sense the voltage level of the core voltage to adjust the voltage level of the high voltage; and    a data transferring metal-oxide semiconductor (MOS) transistor to transfer a data signal having the voltage level of the core voltage, the data transferring MOS transistor to turn on in response to the high voltage.    
   
   
       28 . The semiconductor memory device of  claim 27 , wherein the data transferring MOS transistor comprises a MOS transistor of a unit cell.

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