Image sensing device and manufacture method thereof

Abstract

An image sensing device for receiving an incident light having an incident angle and photo signals formed thereby is provided. The image sensing device includes a micro prism and a micro lens for adjusting the incident angle and converging the incident light, respectively, a photo sensor for converting the photo signals into electronic signals, and an IC stacking layer for processing the electronic signals.

1 . An image sensing device receiving an incident light having an incident angle and photo signals formed thereby, comprising: 
 a micro prism and a micro lens adjusting said incident angle and converging said incident light, respectively;    a photo sensor converting said photo signals into electronic signals; and    an IC stacking layer processing said electronic signals.    
   
   
       2 . The image sensing device according to  claim 1 , wherein said incident light further has a chief ray angle (CRA) formed thereby, and said micro prism decreases said chief ray angle (CRA) of said incident light.  
   
   
       3 . The image sensing device according to  claim 1 , wherein said micro prism is formed by one of dielectric material and polymer material.  
   
   
       4 . The image sensing device according to  claim 1 , wherein said micro prism has a width in the order of micrometers, so is said photo senor.  
   
   
       5 . The image sensing device according to  claim 1  further comprising an intermediate layer separating said micro lens and said micro prism for increasing a refractiveness of said incident light.  
   
   
       6 . The image sensing device according to  claim 5 , wherein said intermediate layer is formed by one selected from the group consisting of silicon dioxide, silicon nitride, silicon oxy-nitride and polymer material.  
   
   
       7 . The image sensing device according to  claim 5 , wherein said intermediate layer comprises a plurality of spacers.  
   
   
       8 . The image sensing device according to  claim 5 , wherein said intermediate layer comprises a plurality of color filters.  
   
   
       9 . The image sensing device according to  claim 5 , wherein said image sensing device along a direction of said incident light comprises: 
 said micro lens disposed above said intermediate layer;    said intermediate layer disposed above said micro prism;    said micro prism disposed above said IC stacking layer; and    said IC stacking layer disposed above said photo sensor.    
   
   
       10 . The image sensing device according to  claim 5 , wherein an arrangement of said image sensing device along a direction of said incident light comprises: 
 said micro prism disposed above said intermediate layer;    said intermediate layer disposed above said micro lens;    said micro lens disposed above said IC stacking layer; and    said IC stacking layer disposed above said photo sensor.    
   
   
       11 . The image sensing device according to  claim 1 , wherein said micro prism, said micro lens, and said photo sensor are configured in a non-decenter arrangement.  
   
   
       12 . The image sensing device according to  claim 1 , wherein said micro prism, said micro lens, and said photo sensor are configured in a decenter arrangement.  
   
   
       13 . The image sensing device according to  claim 12 , wherein said decenter arrangement comprises a regular decenter arrangement and an irregular decenter arrangement.  
   
   
       14 . The image sensing device according to  claim 1 , wherein an arrangement of said image sensing device along a direction of said incident light comprises: 
 said micro prism disposed above said micro lens;    said micro lens disposed above said IC stacking layer; and    said IC stacking layer disposed above said photo sensor.    
   
   
       15 . A method for manufacturing an image sensing device, comprising the steps of: 
 providing a substrate;    forming a photo sensor on said substrate by an IC process;    forming an IC stacking layer on said photo sensor by an IC process;    forming a micro lens on said IC stacking layer by an integrated optical process; and    forming a micro prism on said micro lens by an integrated optical process.    
   
   
       16 . A method for manufacturing an image sensing device, comprising the steps of: 
 providing a substrate;    forming a photo sensor on said substrate by a first IC process;    forming an IC stacking layer on said photo sensor by a second IC process;    forming a micro prism on said IC stacking layer by a first integrated optical process;    forming an intermediate layer on said micro prism by a second integrated optical process; and    forming a micro lens on said intermediate layer by a third integrated optical process.    
   
   
       17 . A method for manufacturing an image sensing device, comprising the steps of: 
 providing a substrate;    forming a photo sensor on said substrate by a first IC process;    forming an IC stacking layer on said photo sensor by a second IC process;    forming a micro lens on said IC stacking layer by a first integrated optical process;    forming an intermediate layer on said micro lens by second integrated optical process; and    forming a micro prism on said intermediate layer by a third integrated optical process.    
   
   
       18 . The method according to  claim 17 , wherein said substrate is a semiconductor substrate.  
   
   
       19 . The method according to  claim 17 , wherein said micro prism is made of a dielectric material which is pervious to light.  
   
   
       20 . The method according to one of claims  17 , wherein said micro prism is manufactured by one selected from the group consisting of gray masking process, photoresist process and etching process.  
   
   
       21 . The method according to  claim 17 , wherein said intermediate layer is manufactured by depositing one selected from the group consisting of silicon oxide, silicon nitride and silicon oxynitride with PECVD process.  
   
   
       22 . The method according to  claim 17 , wherein said intermediate layer is made of polymer material.  
   
   
       23 . An image sensing module, comprising: 
 a package lid;    a plurality of micro prisms disposed on said package lid and adjusting an incident angle of an incident light; and    a plurality of photo sensors converting photo signals of said incident light into electronic signals.    
   
   
       24 . The module according to  claim 23 , wherein each of said plurality of photo sensors comprises a micro lens integrated therewith.  
   
   
       25 . The module according to  claim 23 , wherein a chief ray angle (CRA) of said incident light is adjusted by varying a dimension of each of said plurality of micro prisms.  
   
   
       26 . The module according to  claim 23 , wherein each of said plurality of micro prisms is formed by one of dielectric material and polymer material.  
   
   
       27 . The module according to  claim 23 , wherein each of said plurality of micro prisms has a width in the order of micrometers.  
   
   
       28 . The module according to  claim 23 , wherein a dimension of each of said plurality of micro prisms is varied with its position in said package lid.