Method for forming transparent thin film, transparent thin film formed by the method and transparent substrate with transparent thin film

Abstract

The present invention provides a method for forming a transparent thin film by a chemical vapor deposition method using a gaseous raw material. In the method, a film growth rate is at least 8 nm/s, and the transparent thin film contains at least one selected from carbon (C) and oxygen (O), nitrogen (N), hydrogen (H), and silicon (Si). According to this method, a transparent thin film that does not peel off a substrate easily due to the eased tension in the thin film and has high transmittance in the visible light region can be deposited on a glass ribbon in a float bath.

1 . A method for forming a transparent thin film by a chemical vapor deposition method using a gaseous raw material, 
 wherein the transparent thin film that contains at least one selected from carbon (C) and oxygen (O), nitrogen (N), hydrogen (H), and silicon (Si) is formed at a film growth rate of not less than 8 nm/s.    
     
     
         2 . The method for forming a transparent thin film according to  claim 1 , wherein the gaseous raw material contains at least 0.2 mol % of a silicon-containing compound.  
     
     
         3 . The method for forming a transparent thin film according to  claim 1 , wherein the gaseous raw material contains a silicon-containing compound and ammonia.  
     
     
         4 . The method for forming a transparent thin film according to  claim 3 , wherein a mole ratio of the ammonia to the silicon-containing compound in the gaseous raw material is 40 to 400.  
     
     
         5 . The method for forming a transparent thin film according to  claim 1 , wherein the gaseous raw material contains monosilane (SiH 4 ).  
     
     
         6 . The method for forming a transparent thin film according to  claim 1 , wherein the gaseous raw material is blown onto a surface of a glass ribbon inside a float bath.  
     
     
         7 . The method for forming a transparent thin film according to  claim 6 , wherein the surface of the glass ribbon has a temperature of 700° C. to 830° C.  
     
     
         8 . The method for forming a transparent thin film according to  claim 1 , wherein the glass ribbon has a thickness of 4 mm or less, or is formed to have a thickness of 4 mm or less.  
     
     
         9 - 13 . (canceled)  
     
     
         14 . The method for forming a transparent thin film according to  claim 1 , wherein an atomic percentage of silicon in the transparent thin film is 35 to 45 atom %, and an atomic percentage of nitrogen in the transparent thin film is 30 to 60 atom %.  
     
     
         15 . The method for forming a transparent thin film according to  claim 1 , wherein an atomic percentage of carbon and oxygen in the transparent thing film is 1 to 10 atom %.  
     
     
         16 . The method for forming a transparent thin film according to  claim 1 , wherein the ration of the atomic percentage of nitrogen to the atomic percentage of silicon in the transparent thin film is 0.9 to 1.3.  
     
     
         17 . The method for forming a transparent thin film according to  claim 1 , wherein an atomic percentage of hydrogen in the transparent thin film is 4 to 20 atom %.